High power Q-switched Nd:YAG laser mounted in a silicon microbench
2004 (English)In: Optics and Laser Technology, ISSN 0030-3992, E-ISSN 1879-2545, Vol. 36, no 5, 383-385 p.Article in journal (Refereed) Published
A high-power Q-switched Nd:YAG/Cr:YAG laser mounted in a silicon microbench is presented. It reaches an average output power well above 2 W and the pulse width is in the order of 1.4 ns. The use of microstructure silicon carriers provides efficient thermal control, compact integration and alignment of active and passive optical components.
Place, publisher, year, edition, pages
2004. Vol. 36, no 5, 383-385 p.
Lasers diode-pumped, Microstructure fabrication, Q-switched, Charge coupled devices, Doping (additives), Laser pulses, Micromachining, Microstructure, Neodymium lasers, Photolithography, Pumping (laser), Scanning electron microscopy, Silicon, Laser diode pumped, Microstructure fabrication, Q switched lasers
IdentifiersURN: urn:nbn:se:kth:diva-8892DOI: 10.1016/j.optlastec.2003.10.011ISI: 000221202600007OAI: oai:DiVA.org:kth-8892DiVA: diva2:14371
QC 201009012005-12-082005-12-082010-09-01Bibliographically approved