Selective Si etching using HCl vapor
2004 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, 107-109 p.Article in journal (Refereed) Published
Selective Si etching using HCl in a reduced pressure chemical vapor deposition reactor in the temperature range 800-1000 degrees C is investigated. At 900 degrees C, the etch process is anisotropic, exhibiting the densely packed (100), (311) and (111) surfaces. This behavior indicates that the etch process is limited by surface reaction, since the etch rate in the directions with higher atomic concentration is lower. When the temperature is decreased to 800 degrees C, etch pits occur. A more isotropic etch is obtained at 1000 degrees C, however at this temperature the masking oxide is attacked and the etch surface is rough. Thus the temperature has to be confined to a narrow window to yield desirable properties under the present process conditions.
Place, publisher, year, edition, pages
2004. Vol. T114, 107-109 p.
Anisotropic etching, Chemical vapor deposition, Hydrochloric acid, Surface reactions, Atomic concentration, Masking oxide
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-9099DOI: 10.1088/0031-8949/2004/T114/026ISI: 000204272000027ScopusID: 2-s2.0-34247183792OAI: oai:DiVA.org:kth-9099DiVA: diva2:14955
QC 20101027. Uppdaterad från in press till published (20101027).2005-02-022005-02-022010-10-27Bibliographically approved