Process integration of a new method for formation of shallow junctions in MOSFET structures using recessed and selectively regrown Si1-xGex
2004 (English)Conference paper (Refereed)
Process integration issues concerning recessed epitaxial SiGe(B) source/drain junctions formed by selective Si etching followed by selective epitaxial growth of in situ heavily B-doped Si1-xGex are presented. The proposed concept is beneficial compared to conventional ion implanted junctions, since dopant activation above the solid solubility in Si can be obtained. Nitride residues and surface damage originating from RIE are shown to be detrimental for the epitaxial quality.
Place, publisher, year, edition, pages
2004. Vol. 7, 335-340 p.
Chemical vapor deposition, Etching, Nitrides, Semiconducting silicon compounds, Semiconductor doping, Semiconductor growth, Semiconductor junctions, Silicon compounds, Solubility, Strain, Short-channel effect (SCE), Solid solubility, Source/Drain extension (SDE), Strain compensation effect
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-9101ScopusID: 2-s2.0-17044383842OAI: oai:DiVA.org:kth-9101DiVA: diva2:14957
SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium; Honolulu, HI; United States; 3 October 2004 through 8 October 2004
QC 201010272005-02-022005-02-022014-12-09Bibliographically approved