MOSFETs with recessed SiGe Source/Drain junctions formed by selective etching and growth
2004 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, Vol. 7, no 4, G53-G55 p.Article in journal (Refereed) Published
A source/drain extension process that uses HCl etching followed by selective growth of in situ B-doped SiGe is demonstrated. The two key process steps, etching and growth, are integrated by performing them consecutively in the same chemical vapor deposition reactor. The technique has the potential to solve end-of-the-roadmap requirements on junction depth, junction abruptness, and active doping concentration.
Place, publisher, year, edition, pages
2004. Vol. 7, no 4, G53-G55 p.
Chemical vapor deposition, Concentration (process), Electric conductivity, Etching, Evaporation, Polycrystalline materials, Secondary ion mass spectrometry, Semiconducting silicon compounds, Semiconductor growth, Semiconductor junctions, Transmission electron microscopy
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-9102DOI: 10.1149/1.1646833ISI: 000189265100015ScopusID: 2-s2.0-1842582455OAI: oai:DiVA.org:kth-9102DiVA: diva2:14958
QC 201009232005-02-022005-02-022011-10-31Bibliographically approved