Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts
2003 (English)In: Materials Research Society Symposium Proceedings, ISSN 0272-9172, Vol. 745, 117-122 p.Article in journal (Refereed) Published
The formation of Ni germanosilicides during solid-state interaction between Ni and heavily B-doped strained epitaxial Si1-xGex films with x=0.18, 0.32 and 0.37 is studied. No NiSi2 is found in these samples even after annealing at 850 degreesC, which can be compared to the formation of NiSi2 at 750 T on Si(I 00). Resistance and diffraction studies for the Si0.82Ge0.18 sample indicate that NiSi0.82Ge0.18 forms and the NiSi0.82Ge0.18/Si0.82Ge0.18 structure is stable from 400 to 700 degreesC. For the NiSi1-uGeu formed in all Si1-xGex samples, where u can be different from x, a strong film texturing is observed. When the Ge fraction is increased from 18 at.% to 32-37 at.%, the morphological stability of the film is degraded and a substantial increase in sheet resistance occurs already at 600 degreesC. The contact resistivity for the NiSi0.8Ge0.2/Si0.8Ge0.2 interface formed at 550 T is determined as 1.2x10(-7) Omegacm(2), which satisfies the ITRS contact resistivity requirement for the 70 nm technology node.
Place, publisher, year, edition, pages
2003. Vol. 745, 117-122 p.
Electric contacts, Electric resistance, Epitaxial growth, Rapid thermal annealing, Semiconducting films, Semiconductor doping, Semiconductor junctions, X ray diffraction analysis, Sheet resistance, Silicidation
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-9104ISI: 000182316500018OAI: oai:DiVA.org:kth-9104DiVA: diva2:14960
QC 201010272005-02-022005-02-022010-10-28Bibliographically approved