Lateral growth and three-dimensional effects in contacts between NiSi0.82Ge0.18 and p(+)-Si0.82Ge0.18
2005 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 489, no 1-2, 159-163 p.Article in journal (Refereed) Published
Electrical contacts of NiSi0.82Ge0.18 to P+-Si0.82Ge0.18 were fabricated and characterised. Lateral growth of the NiSi0.82Ge0.18 under SiO2 isolation was observed. A three-dimensional model was employed to extract the contact resistivity by considering both the lateral growth and the presence of a recessed NiSi0.82Ge0.18 step into the Si0.82Ge0.18. The contact resistivity extracted was 5.0 x 10(-8) and 1.4 x 10(-7) Omega cm(2) for small contacts of circular geometry and large contacts of square shape, respectively. Possible causes responsible for this 3-fold difference in contact resistivity were discussed. An underestimate of the contact resistivity by 35% was found if a two-dimensional model was used without taking into account the complex interface morphology.
Place, publisher, year, edition, pages
2005. Vol. 489, no 1-2, 159-163 p.
nickel silicides, silicon-germanium, contacts, interfaces
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-9105DOI: 10.1016/j.tsf.2005.04.090ISI: 000231435400025ScopusID: 2-s2.0-23144447233OAI: oai:DiVA.org:kth-9105DiVA: diva2:14961
QC 20101028. Uppdaterad från accepted till published (20101028).2005-02-022005-02-022010-10-28Bibliographically approved