A 110-170-GHz Non-Galvanic Interface for Integrating Silicon Micromachined Chips With Metallic Waveguide SystemsShow others and affiliations
2021 (English)In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 69, no 8, p. 3667-3674Article in journal (Refereed) Published
Abstract [en]
We report on the development of a non-galvanic transition from a silicon micromachined to metallic rectangular waveguide for use in integrated waveguide systems at D-band (110-170 GHz). This transition overcomes the limitations of current solutions that require proper ohmic (galvanic) contact between both waveguides, and thus relaxes tolerance requirements in assembly and manufacturing. The transition uses an in-plane design which enables low-loss integration of micromachined waveguide components, as it eliminates the need for waveguide bends and complex multi-layer structures. We describe the RF design, analyze the EM simulation results, and explain the operating principle of the transition. To verify the concept, dedicated silicon micromachined and metallic waveguides are designed and fabricated. Characterization of the assembled samples shows good agreement with simulation. The transition achieves a typical insertion loss of 0.3 dB and return loss above 20 dB over most of the D-band. Measurement of multiple samples and repeated assemblies results in a variation of S21 of less than +/- 0.1 dB over the whole band, demonstrating good robustness and repeatability. By removing the need for galvanic connection, automated tools can then be used during system assembly, which enables industrial scale applications such as wireless communications.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2021. Vol. 69, no 8, p. 3667-3674
Keywords [en]
D-band, integrated waveguide system, millimeter-wave, non-galvanic, silicon micromachined components, waveguide transition, wireless communication
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-300858DOI: 10.1109/TMTT.2021.3085581ISI: 000682168300009Scopus ID: 2-s2.0-85112386788OAI: oai:DiVA.org:kth-300858DiVA, id: diva2:1598037
Note
QC 20210928
2021-09-282021-09-282022-06-25Bibliographically approved