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Enhanced Modulation Bandwidth of a Magnetic Tunnel Junction-Based Spin Torque Nano-Oscillator Under Strong Current Modulation
Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India.;Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119077, Singapore..
Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India.;Spintec, CNRS, CEA, F-38000 Grenoble, France..
KTH, School of Engineering Sciences (SCI), Applied Physics, Materials and Nanophysics. Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden..ORCID iD: 0000-0002-3513-6608
Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India..
2021 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 42, no 12, p. 1886-1889Article in journal (Refereed) Published
Abstract [en]

The modulation bandwidth (f(BW)) is a critical figure-of-merit for wireless communication applications of spin torque nano-oscillators (STNOs) as it determines the maximum data rate. Although both theory and previous experiments have shown that f(BW) in STNOs is governed by the amplitude relaxation frequency f(p), we here demonstrate, using single-shot time-resolved measurements of a magnetic tunnel junction based STNO, that it can be many times larger under strong modulation. The behavior is qualitatively reproduced in macrospin simulations. Our results show that f(BW) of STNOs is not as limiting a factor for future wireless applications as previously believed.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2021. Vol. 42, no 12, p. 1886-1889
Keywords [en]
Spin torque nano-oscillators, modulation bandwidth, nonlinear frequency and amplitude modulation
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-306482DOI: 10.1109/LED.2021.3122241ISI: 000722001400052Scopus ID: 2-s2.0-85118594561OAI: oai:DiVA.org:kth-306482DiVA, id: diva2:1637555
Note

QC 20220214

Available from: 2022-02-14 Created: 2022-02-14 Last updated: 2022-06-25Bibliographically approved

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Åkerman, Johan

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