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Nitrogen-containing gas sensing properties of 2-D Ti2N and its derivative nanosheets: Electronic structures insight
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Properties. Condensed Matter Theory, Department of Physics and Astronomy, Ångström Laboratory, Uppsala University, 75120 Uppsala, Sweden..ORCID iD: 0000-0003-1231-9994
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2021 (English)In: Nanomaterials, E-ISSN 2079-4991, Vol. 11, no 9, p. 2459-, article id 2459Article in journal (Refereed) Published
Abstract [en]

In this work, the potentials of two-dimensional Ti2N and its derivative nanosheets Ti2NT2(T=O, F, OH) for some harmful nitrogen-containing gas (NCG) adsorption and sensing applications have been unveiled based on the quantum-mechanical Density Functional Theory calculations. It is found that the interactions between pure Ti2N and NCGs (including NO, NO2, and NH3 in this study) are very strong, in which NO and NO2 can even be dissociated, and this would poison the substrate of Ti2N monolayer and affect the stability of the sensing material. For the monolayer of Ti2NT2(T=O, F, OH) that is terminated by functional groups on surface, the adsorption energies of NCGs are greatly reduced, and a large amount of charges are transferred to the functional group, which is beneficial to the reversibility of the sensing material. The significant changes in work function imply the good sensitivity of the above mentioned materials. In addition, the fast response time further consolidates the prospect of two-dimensional Ti2NT2 as efficient NCGs’ sensing materials. This theoretical study would supply physical insight into the NCGs’ sensing mechanism of Ti2N based nanosheets and help experimentalists to design better 2-D materials for gas adsorption or sensing applications.

Place, publisher, year, edition, pages
MDPI AG , 2021. Vol. 11, no 9, p. 2459-, article id 2459
Keywords [en]
Atomic structure, Density Functional Theory (DFT), Electronic structure, MXenes, Two-dimensional materials
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-311756DOI: 10.3390/nano11092459ISI: 000701453300001PubMedID: 34578775Scopus ID: 2-s2.0-85115273137OAI: oai:DiVA.org:kth-311756DiVA, id: diva2:1655967
Note

QC 20220504

Available from: 2022-05-04 Created: 2022-05-04 Last updated: 2022-09-23Bibliographically approved

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Ahuja, Rajeev

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