Studies on Schottky Barrier Diodes Fabricated using Single-Crystal Wafers of β-Ga2O3 Grown by the Optical Floating Zone TechniqueShow others and affiliations
2022 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 259, no 2, article id 2100496Article in journal (Refereed) Published
Abstract [en]
β-Ga2O3 is one of the most promising wide-bandgap materials for optoelectronic applications as well as a conducting substrate for GaN-based device technologies. Single crystals of undoped β-Ga2O3 are grown by the optical floating zone technique utilizing compressed dry air as growth atmosphere. The properties of β-Ga2O3 are highly anisotropic. Optimization of the processing recipe for wafers along different orientations suitable for device development is conducted. Structural, optical, and electrical properties of the wafers are determined. Efforts are made to fabricate Schottky diodes based on Pt/Ti/Au–β-Ga2O3–Ti/Au device structures. Devices are fabricated on (−201) cut wafers. The device characteristics are discussed in detail.
Place, publisher, year, edition, pages
Wiley , 2022. Vol. 259, no 2, article id 2100496
Keywords [en]
electrical properties, optical floating zone technique, Schottky diodes, structural properties, β-Ga2O3 single crystals, Diodes, Fabrication, Gallium nitride, III-V semiconductors, Optical properties, Schottky barrier diodes, Wide band gap semiconductors, Conducting substrates, Floating zone technique, GaN-based devices, Optical floating zones, Optoelectronic applications, Single crystal wafers, Wide band-gap material, Β-ga2O3 single crystal, Single crystals
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-312303DOI: 10.1002/pssb.202100496ISI: 000706876900001Scopus ID: 2-s2.0-85116913299OAI: oai:DiVA.org:kth-312303DiVA, id: diva2:1661946
Note
QC 20220530
2022-05-302022-05-302022-06-25Bibliographically approved