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Effect of Solvent Vapor Annealing on Diblock Copolymer-Templated Mesoporous Si/Ge/C Thin Films: Implications for Li-Ion Batteries
Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
Tech Univ Munich, Chem Dept, Lehrstuhl Anorgan Chem Mit Schwerpunkt Neue Mat, D-85748 Garching, Germany..
Tech Univ Munich, Chem Dept, Lehrstuhl Anorgan Chem Mit Schwerpunkt Neue Mat, D-85748 Garching, Germany..
Tech Univ Munich, Phys Dept, Lehrstuhl Funkt Mat, D-85748 Garching, Germany..
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2022 (English)In: ACS Applied Nano Materials, E-ISSN 2574-0970, Vol. 5, no 5, p. 7278-7287Article in journal (Refereed) Published
Abstract [en]

Although amphiphilic diblock copolymer templating of inorganic materials such as TiO2 is already well investigated, sol-gel synthesis routines for porous silicon and germanium are relatively rare. Therefore, especially in the field of Li-ion batteries, novel synthesis routines with the possibility to tune the silicon and germanium ratio and the morphology in the nanometer regime are of high interest. Here, we demonstrate a synthesis method that allows a change of morphology and elemental composition with minimal effort. We evidence a morphological transformation in the nanometer regime with real space (scanning electron microscopy) and complementary reciprocal space analysis methods (grazing-incidence small-angle X-ray scattering). Although energy-dispersive X-ray spectroscopy (EDS) reveals a considerable amount of oxygen in the thin film, crystalline Ge in the bulk is detected with powder Xray diffraction (PXRD) and Raman spectroscopy. Due to the system's simplicity, chemical mass production options such as roll-to-roll or slot-die printing can also be considered high-yield methods compared to standard synthesis routines.

Place, publisher, year, edition, pages
American Chemical Society (ACS) , 2022. Vol. 5, no 5, p. 7278-7287
Keywords [en]
polystyrene-b-poly(ethylene oxide), diblock copolymer, solvent vapor annealing, silicon, germanium, GISAXS, sol-gel
National Category
Nano Technology Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-316447DOI: 10.1021/acsanm.2c01191ISI: 000820604500001Scopus ID: 2-s2.0-85131676750OAI: oai:DiVA.org:kth-316447DiVA, id: diva2:1688212
Note

QC 20230920

Available from: 2022-08-18 Created: 2022-08-18 Last updated: 2023-09-20Bibliographically approved

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Roth, Stephan V.

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