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In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite
Luleå Univ Technol, Dept Engn Sci & Math, Div Mat Sci, S-97187 Luleå, Sweden..
KTH, School of Engineering Sciences in Chemistry, Biotechnology and Health (CBH), Chemistry, Surface and Corrosion Science. Luleå Univ Technol, Dept Engn Sci & Math, Div Mat Sci, S-97187 Luleå, Sweden.ORCID iD: 0000-0001-6877-9282
KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics. Intermodulat Prod AB, S-82393 Segersta, Sweden..ORCID iD: 0000-0003-0675-974X
Luleå Univ Technol, Dept Engn Sci & Math, Div Mat Sci, S-97187 Luleå, Sweden..
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2022 (English)In: npj 2D Materials and Applications, ISSN 2397-7132, Vol. 6, no 1, article id 57Article in journal (Refereed) Published
Abstract [en]

A key requirement for semiconductors operating in light-harvesting devices, is to efficiently convert the absorbed photons to electronic excitations while accommodating low loss pathways for the photogenerated carrier's transport. The quality of this process corresponds to different relaxation phenomena, yet primarily it corresponds to minimized thermalization of photoexcited carriers and maximum transfer of electron-hole pairs in the bulk of semiconductor. However, several semiconductors, while providing a suitable platform for light-harvesting applications, pose intrinsic low carrier diffusion length of photoexcited carriers. Here we report a system based on a vertical network of reduced graphene oxide (rGO) embedded in a thin-film structure of iron oxide semiconductor, intended to exploit fast electron transport in rGO to increase the photoexcited carrier transfer from the bulk of the semiconductor to rGO and then to the external circuit. Using intermodulation conductive force microscopy, we locally monitored the fluctuation of current output, which is the prime indication of successful charge transfer from photoexcited semiconductor to rGO and efficient charge collection from the bulk of the semiconductor. We reveal the fundamental properties of vertical rGO and semiconductor junction in light-harvesting systems that enable the design of new promising materials for broadband optical applications.

Place, publisher, year, edition, pages
Springer Nature , 2022. Vol. 6, no 1, article id 57
National Category
Physical Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-319091DOI: 10.1038/s41699-022-00333-5ISI: 000849458700001Scopus ID: 2-s2.0-85137588426OAI: oai:DiVA.org:kth-319091DiVA, id: diva2:1698776
Note

QC 20220926

Available from: 2022-09-26 Created: 2022-09-26 Last updated: 2022-09-26Bibliographically approved

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Dobryden, IlliaForchheimer, Daniel

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