Photoluminescence study of Si1-xGex nanoparticles in various oxide matricesShow others and affiliations
2021 (English)In: 2021 International Semiconductor Conference (Cas), Institute of Electrical and Electronics Engineers (IEEE) , 2021, p. 21-24Conference paper, Published paper (Refereed)
Abstract [en]
We investigate the photoluminescence properties of structures comprising of Si1-xGex nanoparticles (NPs) within SiO2, GeO2, TiO2 and Ta2O5 oxide matrices. Of the investigated structures, it was observed that the structures with GeO2 and TiO2 matrices provide increased spectral response (at similar to 907 and 844 nm respectively) and increased PL intensity. The improved PL characteristic have been attributed to increased diffusion barrier against oxygen which otherwise would result in formation of unwanted oxide at the film-oxide interface, thereby deteriorating the optical properties.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2021. p. 21-24
Series
International Semiconductor Conference, ISSN 1545-827X
Keywords [en]
SiGe, nanoparticles, photoluminescence, oxide
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-319471DOI: 10.1109/CAS52836.2021.9604131ISI: 000853482700003Scopus ID: 2-s2.0-85123006232OAI: oai:DiVA.org:kth-319471DiVA, id: diva2:1699958
Conference
44th International Semiconductor Conference (CAS), OCT 06-08, 2021, Virtual, Online, ELECTR NETWORK
Note
Part of proceedings: ISBN 978-1-6654-3571-0
QC 20220929
2022-09-292022-09-292022-09-29Bibliographically approved