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Foundations of physical vapor deposition with plasma assistance
KTH, School of Electrical Engineering and Computer Science (EECS), Electrical Engineering, Space and Plasma Physics. Univ Iceland, Sci Inst, Dunhaga 3, IS-107 Reykjavik, Iceland..ORCID iD: 0000-0002-8153-3209
Leibniz Inst Surface Engn IOM, Permoserstr 15, D-04318 Leipzig, Germany.;Univ Leipzig, Felix Bloch Inst Solid State Phys, Linnestr 5, D-04103 Leipzig, Germany..
Ruhr Univ Bochum, Inst Expt Phys 2, Bochum, Germany..
2022 (English)In: Plasma sources science & technology, ISSN 0963-0252, E-ISSN 1361-6595, Vol. 31, no 8, p. 083001-, article id 083001Article, review/survey (Refereed) Published
Abstract [en]

Physical vapor deposition (PVD) refers to the removal of atoms from a solid or a liquid by physical means, followed by deposition of those atoms on a nearby surface to form a thin film or coating. Various approaches and techniques are applied to release the atoms including thermal evaporation, electron beam evaporation, ion-driven sputtering, laser ablation, and cathodic arc-based emission. Some of the approaches are based on a plasma discharge, while in other cases the atoms composing the vapor are ionized either due to the release of the film-forming species or they are ionized intentionally afterward. Here, a brief overview of the various PVD techniques is given, while the emphasis is on sputtering, which is dominated by magnetron sputtering, the most widely used technique for deposition of both metallic and compound thin films. The advantages and drawbacks of the various techniques are discussed and compared.

Place, publisher, year, edition, pages
IOP Publishing , 2022. Vol. 31, no 8, p. 083001-, article id 083001
Keywords [en]
physical vapor deposition, magnetron sputtering, cathodic arc deposition, ion beam deposition, sputtering, pulsed laser deposition
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-319461DOI: 10.1088/1361-6595/ac7f53ISI: 000855544700001Scopus ID: 2-s2.0-85144447138OAI: oai:DiVA.org:kth-319461DiVA, id: diva2:1700255
Note

QC 20220930

Available from: 2022-09-30 Created: 2022-09-30 Last updated: 2023-06-08Bibliographically approved

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Gudmundsson, Jon Tomas

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