Engineering MoOx/MXene Hole Transfer Layers for Unexpected Boosting of Photoelectrochemical Water OxidationShow others and affiliations
2022 (English)In: Angewandte Chemie International Edition, ISSN 1433-7851, E-ISSN 1521-3773, Vol. 61, no 16, article id e202200946Article in journal (Refereed) Published
Abstract [en]
The development of semiconductor photoanodes is of great practical interest for the realization of photoelectrochemical (PEC) water splitting. Herein, MXene quantum dots (MQD) were grafted on a BiVO4 substrate, then a MoOx layer by combining an ultrathin oxyhydroxide oxygen evolution cocatalyst (OEC) was constructed as an integrated photoanode. The OEC/MoOx/MQD/BiVO4 array not only achieves a current density of 5.85 mA cm−2 at 1.23 V versus a reversible hydrogen electrode (vs. RHE), but also enhances photostability. From electrochemical analysis and density functional theory calculations, high PEC performance is ascribed to the incorporation of MoOx/MQD as hole transfer layers, retarding charge recombination, promoting hole transfer and accelerating water splitting kinetics. This proof-of-principle work not only demonstrates the potential utilization of hole transfer layers, but also sheds light on rational design and fabrication of integrated photoanodes for feasible solar energy conversion.
Place, publisher, year, edition, pages
Wiley , 2022. Vol. 61, no 16, article id e202200946
Keywords [en]
Hole Transfer Layer, Integrated Photoanode, MXene Quantum Dots, Photoelectrochemical Water Splitting, Reaction Kinetics, Bismuth compounds, Density functional theory, Energy conversion, Molybdenum oxide, Nanocrystals, Photoelectrochemical cells, Quantum chemistry, Solar energy, Co catalysts, Hole transfer, Mxene quantum dot, Oxygen evolution, Photo-anodes, Photoelectrochemical water oxidation, Transfer layers, Semiconductor quantum dots
National Category
Physical Chemistry Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-320816DOI: 10.1002/anie.202200946ISI: 000758278900001PubMedID: 35142021Scopus ID: 2-s2.0-85124872618OAI: oai:DiVA.org:kth-320816DiVA, id: diva2:1708895
Note
QC 20221107
2022-11-072022-11-072022-11-07Bibliographically approved