The integration of III-V materials on photonic integrated circuits has enjoyed a lot of attention because of the necessity of merging photon sources with silicon electronics. Nevertheless, III-V source integration technologies are not sufficiently mature, inhibiting the employment of such platforms to a broader range of applications. Here, we present a novel approach that enables the transfer of III-V nanolayers (≈250 nm) to silicates via oxide bonding. Through use of a thick photoresist scaffold (≈30 μm), complete removal of the substrate can be performed while preserving the relative structure morphology. The use of the III-V native oxide without depositing interfacial oxide layers greatly reduces the processing time and cost. The transfer of an array composed of 1 mm long InGaP waveguides with 250 nm thickness and widths spanning from 0.7 to 11.2 μm to a SiO2substrate has been experimentally demonstrated, evidencing the feasibility of the technique for wafer-scale processing. The application of the nanolayered waveguides in the spontaneous-parametric down-conversion process has been tested by photon-correlation measurement, showing good agreement with the theoretical model.