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Solvent Engineering of Perovskite Crystallization for High Band Gap FAPbBr3 Perovskite Solar Cells Prepared in Ambient Condition
Department of Chemistry-Ångström, Physical Chemistry, Uppsala University, 75120 Uppsala, Sweden.
Department of Chemistry-Ångström, Physical Chemistry, Uppsala University, 75120 Uppsala, Sweden.
KTH, School of Engineering Sciences in Chemistry, Biotechnology and Health (CBH), Chemistry, Organic chemistry.ORCID iD: 0000-0002-1303-0482
Department of Chemistry-Ångström, Physical Chemistry, Uppsala University, 75120 Uppsala, Sweden.
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2023 (English)In: ACS Applied Energy Materials, E-ISSN 2574-0962, Vol. 6, no 13, p. 7102-7108Article in journal (Refereed) Published
Abstract [en]

High band gap FAPbBr3 perovskite solar cells have attracted tremendous interest in recent years due to the high open circuit voltage and good stability. Commonly a two-step method is used to prepare the FAPbBr3 perovskite film. Here a mixed solvent approach for the second step is introduced. Formamidinium bromide (FABr) in 2-propanol and methanol mixture was applied in the second step, which resulted in favorable properties such as suitable solubility, high-quality crystallization, large grain size, improved charge extraction properties, and suppressed non-radiative recombination processes, and further enhance the power conversion efficiency (PCE) from 4.06 to 7.87%. As previously reported, methylammonium chloride (MACl) can help to improve the morphology and crystallinity of perovskite. To further prove the versatility of such a mixed solvent strategy and enhance the photovoltage performance, a small amount of MACl was added to the FABr solution with mixed solvents, and a high PCE of 9.23% was achieved under ambient conditions.

Place, publisher, year, edition, pages
American Chemical Society (ACS) , 2023. Vol. 6, no 13, p. 7102-7108
Keywords [en]
ambient conditions, FAPbBr 3, IPA, MACl, MeOH, solvent engineering
National Category
Physical Chemistry Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-338545DOI: 10.1021/acsaem.3c00791ISI: 001016730100001Scopus ID: 2-s2.0-85164453248OAI: oai:DiVA.org:kth-338545DiVA, id: diva2:1810536
Note

QC 20231108

Available from: 2023-11-08 Created: 2023-11-08 Last updated: 2023-11-08Bibliographically approved

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