This paper investigates the short-circuit behavior of SiC MOSFETs in half bridge configuration during shoot-through event. The short-circuit peak current (ISCP) as well as the distribution of drain to source voltage (VDS) of half bridge configuration are analyzed under various mismatch operating condition. Further, the determinants on total amount and distribution of short-circuit energy (SC energy) are obtained. It is revealed that the device with the lowest short-circuit current carrying capacity determines the ISCP and the total SC energy of half bridge leg. Besides, the decrease of active switch common source inductance can mitigate the VDS and SC energy imbalance caused by load current. The conclusions are validated by experimental results.