An integrated silicon pressure-shear stress sensor has been designed, fabricated and tested in a turbulent wall-boundary layer. The piezoresistive pressure sensor is based on polysilicon diaphragm technology and the thermal shear stress sensor on the gas cooling of a polyimide insulated heated chip. The pressure sensor diaphragm area is 100 * 100 pm, the top-area of the shear stress sensor hot chip is 300 * 60 pm and the edge-to-edge distance between the two areas is 100 pm. The measured steady-state power dissipation of the shear stress sensor in a turbulent wall-boundary layer at an overtemperature of 100°C was P = 42 + 1.1 τ0.500 mW where τ0 is the time-average wall shear stress. The new integrated sensor has been applied for the simultaneous measurement of fluctuating pressure and shear stress in a flat plate boundary layer at a Reynolds number range of 4.9 * 103 < Re θ < 1.0 * 104. Pressure-shear stress correlation coefficients were found between 0.40 and 0.50 for the parallel, and between 0.20 and 0.25 for the perpendicular configuration to the mean flow.