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High-speed direct Modulation of widely tunable MG-Y laser
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Fotonik och optik)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Fotonik och optik)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0003-3056-4678
2005 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 17, no 6, 1157-1159 p.Article in journal (Refereed) Published
Abstract [en]

The dynamic performance of the modulated-grating Y-branch laser is presented. In order to reach over 40-nm tuning range, the devices utilize an additive Vernier effect and relative tuning of two reflecting gratings. The device shows high (> 13 dBrn ex-facet) and uniform (< 1.2-dB variation) steady state output power over the tuning range, and sidemode suppression ratio > d40 dB. The laser behavior under small- and large-signal operation conditions is investigated. The laser exhibits a resonance frequency of 7.4-8.8 GHz at 80-mA bias. A 10-Gb/s eye diagram measurement showed, high extinction ratio and signal-to-noise ratio.

Place, publisher, year, edition, pages
2005. Vol. 17, no 6, 1157-1159 p.
Keyword [en]
high-speed modulation; semiconductor laser; tunable laser
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-11139DOI: 10.1109/LPT.2005.846489ISI: 000229850300007Scopus ID: 2-s2.0-20544439017OAI: oai:DiVA.org:kth-11139DiVA: diva2:236338
Note
QC 20100707Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2017-12-13Bibliographically approved
In thesis
1. Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
Open this publication in new window or tab >>Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences.The introduction starts with the physical background and a review of thesemiconductor material properties which both affects the design andfabrication of the devices and determine their performance in applicationssuch as wavelength, optical power and attenuation, drive current andvoltage, temperature sensitivity and modulation bandwidth.The next chapter of the introduction is dedicated to various kinds ofsemiconductor lasers. It describes the physical principles, steady stateoperation and the dynamical response. The laser is essentially an opticalcavity consisting of a material with optical gain inbetween two reflectivemirrors. Special attention is given to the spectral shape of the mirrorreflectivity and its effect on the laser dynamics and how these effects canbe distinguished from those of the gain material.In order to improve dynamic performance, it is common that the laser,instead of being directly modulated by varying the drive current, isconnected to a separate modulator. The next chapter is therefore devotedto electroabsorption modulators for high speed intensity modulation andtheir integration to lasers. In order to fully take advantage of the highintrinsic modulation bandwidth of these devices it is important to havea good microwave design to avoid electrical parasitics. A segmented paddesign to achieve this is briefly described.The last part of the introduction covers measurements techniques that wereimplemented to experimentally investigate above devices. A description ofthe measurement methods, including practical hints and methods forevaluation of the measured results are provided.

Place, publisher, year, edition, pages
Stockholm: KTH, 2009. xii, 72 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2009:8
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-11149 (URN)
Public defence
2009-09-30, KTH-Electrum, sal/ hall C2, Isafjordsgatan 26, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20100707Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2010-07-21Bibliographically approved

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Schatz, Johan Richard

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