Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Monolithically Integrated 100 GHz DFB-TWEAM
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.ORCID iD: 0000-0001-7056-4379
Syntune AB, Kista, Sweden.
Show others and affiliations
2009 (English)In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 7, no 16, 3410-3415 p.Article in journal (Refereed) Published
Abstract [en]

A monolithically integrated distributed feedback (DFB) laser and traveling-wave electro-absorption modulator (TWEAM) with >= 100 GHz -dBe bandwidth suitable for Non-return-to-zero (NRZ) operation with on-off keying (OOK) is presented. The steady-state, small-signal modulation response, microwave reflection, chirp characteristic, and both data operation and transmission were investigated. The DFB-TWEAM was found to be an attractive candidate for future short distance communication in high bitrates systems.

Place, publisher, year, edition, pages
2009. Vol. 7, no 16, 3410-3415 p.
Keyword [en]
High-speed modulator; integrated device; optoelectronics; waveguide modulator
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-11143DOI: 10.1109/JLT.2009.2015773ISI: 000268347700001Scopus ID: 2-s2.0-68349155533OAI: oai:DiVA.org:kth-11143DiVA: diva2:236369
Note
QC 20100707Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2017-12-13Bibliographically approved
In thesis
1. Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
Open this publication in new window or tab >>Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences.The introduction starts with the physical background and a review of thesemiconductor material properties which both affects the design andfabrication of the devices and determine their performance in applicationssuch as wavelength, optical power and attenuation, drive current andvoltage, temperature sensitivity and modulation bandwidth.The next chapter of the introduction is dedicated to various kinds ofsemiconductor lasers. It describes the physical principles, steady stateoperation and the dynamical response. The laser is essentially an opticalcavity consisting of a material with optical gain inbetween two reflectivemirrors. Special attention is given to the spectral shape of the mirrorreflectivity and its effect on the laser dynamics and how these effects canbe distinguished from those of the gain material.In order to improve dynamic performance, it is common that the laser,instead of being directly modulated by varying the drive current, isconnected to a separate modulator. The next chapter is therefore devotedto electroabsorption modulators for high speed intensity modulation andtheir integration to lasers. In order to fully take advantage of the highintrinsic modulation bandwidth of these devices it is important to havea good microwave design to avoid electrical parasitics. A segmented paddesign to achieve this is briefly described.The last part of the introduction covers measurements techniques that wereimplemented to experimentally investigate above devices. A description ofthe measurement methods, including practical hints and methods forevaluation of the measured results are provided.

Place, publisher, year, edition, pages
Stockholm: KTH, 2009. xii, 72 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2009:8
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-11149 (URN)
Public defence
2009-09-30, KTH-Electrum, sal/ hall C2, Isafjordsgatan 26, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20100707Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2010-07-21Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopushttp://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4840453

Authority records BETA

Westergren, Urban

Search in DiVA

By author/editor
Chacinski, MarekWestergren, UrbanStoltz, BjörnThylén, Lars
By organisation
Microelectronics and Applied Physics, MAPKista Photonics Research Center, KPRCPhotonics
In the same journal
Journal of Lightwave Technology
Atom and Molecular Physics and Optics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 179 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf