Experimental characterization of high-speed 1.55 mu m buried heterostructure InGaAsP/InGaAlAs quantum-well lasers
2009 (English)In: Journal of the Optical Society of America. B, Optical physics, ISSN 0740-3224, Vol. 26, no 2, 318-327 p.Article in journal (Refereed) Published
Detailed experimental characterization is performed for 1550 nm semi-insulating regrown buried heterostructure Fabry-Perot (FP) lasers having 20 InGaAsP/InGaAlAs strain-balanced quantum wells (QWs) in the active region. Light-current-voltage performance, electrical impedance, small-signal response below and above threshold, amplified spontaneous emission spectrum below threshold and relative intensity noise spectrum are measured. Different laser parameters such as external differential quantum efficiency eta(d), background optical loss alpha(i), K-factor, D-factor, characteristic temperature T-0, differential gain dg/dn, gain-compression factor epsilon, carrier density versus current, differential carrier lifetime tau(d), optical gain spectrum below threshold, and chirp parameter alpha are extracted from these measurements. The FP lasers exhibited a high T-0 (78-86.5 degrees C) and very high-resonance frequency (23.7 GHz). The results indicate that appropriately designed lasers having a large number of InGaAsP well/InGaAlAs barrier QWs with shallow valence-band discontinuity can be useful for un-cooled high-speed direct-modulated laser applications.
Place, publisher, year, edition, pages
2009. Vol. 26, no 2, 318-327 p.
CARRIER TRANSPORT; MQW LASERS; MODULATION BANDWIDTH; INGAASP; WAVELENGTH
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-11144DOI: 10.1364/JOSAB.26.000318ISI: 000263925700017ScopusID: 2-s2.0-60549084726OAI: oai:DiVA.org:kth-11144DiVA: diva2:236372
QC 201007072009-09-222009-09-222012-03-21Bibliographically approved