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Experimental characterization of high-speed 1.55 mu m buried heterostructure InGaAsP/InGaAlAs quantum-well lasers
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. (Photonics)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics. (Photonics)ORCID iD: 0000-0003-3056-4678
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2009 (English)In: Journal of the Optical Society of America. B, Optical physics, ISSN 0740-3224, E-ISSN 1520-8540, Vol. 26, no 2, 318-327 p.Article in journal (Refereed) Published
Abstract [en]

Detailed experimental characterization is performed for 1550 nm semi-insulating regrown buried heterostructure Fabry-Perot (FP) lasers having 20 InGaAsP/InGaAlAs strain-balanced quantum wells (QWs) in the active region. Light-current-voltage performance, electrical impedance, small-signal response below and above threshold, amplified spontaneous emission spectrum below threshold and relative intensity noise spectrum are measured. Different laser parameters such as external differential quantum efficiency eta(d), background optical loss alpha(i), K-factor, D-factor, characteristic temperature T-0, differential gain dg/dn, gain-compression factor epsilon, carrier density versus current, differential carrier lifetime tau(d), optical gain spectrum below threshold, and chirp parameter alpha are extracted from these measurements. The FP lasers exhibited a high T-0 (78-86.5 degrees C) and very high-resonance frequency (23.7 GHz). The results indicate that appropriately designed lasers having a large number of InGaAsP well/InGaAlAs barrier QWs with shallow valence-band discontinuity can be useful for un-cooled high-speed direct-modulated laser applications.

Place, publisher, year, edition, pages
2009. Vol. 26, no 2, 318-327 p.
Keyword [en]
CARRIER TRANSPORT; MQW LASERS; MODULATION BANDWIDTH; INGAASP; WAVELENGTH
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-11144DOI: 10.1364/JOSAB.26.000318ISI: 000263925700017Scopus ID: 2-s2.0-60549084726OAI: oai:DiVA.org:kth-11144DiVA: diva2:236372
Note
QC 20100707Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2017-12-13Bibliographically approved
In thesis
1. Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
Open this publication in new window or tab >>Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences.The introduction starts with the physical background and a review of thesemiconductor material properties which both affects the design andfabrication of the devices and determine their performance in applicationssuch as wavelength, optical power and attenuation, drive current andvoltage, temperature sensitivity and modulation bandwidth.The next chapter of the introduction is dedicated to various kinds ofsemiconductor lasers. It describes the physical principles, steady stateoperation and the dynamical response. The laser is essentially an opticalcavity consisting of a material with optical gain inbetween two reflectivemirrors. Special attention is given to the spectral shape of the mirrorreflectivity and its effect on the laser dynamics and how these effects canbe distinguished from those of the gain material.In order to improve dynamic performance, it is common that the laser,instead of being directly modulated by varying the drive current, isconnected to a separate modulator. The next chapter is therefore devotedto electroabsorption modulators for high speed intensity modulation andtheir integration to lasers. In order to fully take advantage of the highintrinsic modulation bandwidth of these devices it is important to havea good microwave design to avoid electrical parasitics. A segmented paddesign to achieve this is briefly described.The last part of the introduction covers measurements techniques that wereimplemented to experimentally investigate above devices. A description ofthe measurement methods, including practical hints and methods forevaluation of the measured results are provided.

Place, publisher, year, edition, pages
Stockholm: KTH, 2009. xii, 72 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2009:8
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-11149 (URN)
Public defence
2009-09-30, KTH-Electrum, sal/ hall C2, Isafjordsgatan 26, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20100707Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2010-07-21Bibliographically approved

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Publisher's full textScopushttp://www.opticsinfobase.org/abstract.cfm?URI=josab-26-2-318

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Schatz, RichardLourdudoss, Sebastian

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