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Dynamic properties of electrically p-n confined, epitaxially regrown 1.27 μm InGaAs single-mode vertical-cavity surface-emitting lasers
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).ORCID iD: 0000-0003-3056-4678
KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).ORCID iD: 0000-0001-7056-4379
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2009 (English)In: IET optoelectronics, ISSN 1751-8768, Vol. 3, no 3, 163-167 p.Article in journal (Refereed) Published
Abstract [en]

The dynamic performance including chirp measurements of 1.27 mu m single-mode InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a large gain-cavity offset is presented. The VCSELs are based on a novel p-n confinement structure with selective area epitaxial regrowth. A resonance frequency of 9.11 GHz, a slope efficiency of 0.25 W/A and an alpha-factor of 5.7 were measured. The modulation bandwidth is limited by electrical parasitics. Eye diagrams at 5 Gb/s with 7 dB extinction ratio and Q-factor around 5 were obtained. The results are compared with the performance of oxide-confined VCSELs with similar active layer and negative gain-cavity detuning.

Place, publisher, year, edition, pages
2009. Vol. 3, no 3, 163-167 p.
Keyword [en]
PERFORMANCE; VCSELS
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-11146DOI: 10.1049/iet-opt.2008.0066ISI: 000267060300006Scopus ID: 2-s2.0-65949122752OAI: oai:DiVA.org:kth-11146DiVA: diva2:236375
Note

QC 20100707

Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2016-12-19Bibliographically approved
In thesis
1. Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
Open this publication in new window or tab >>Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences.The introduction starts with the physical background and a review of thesemiconductor material properties which both affects the design andfabrication of the devices and determine their performance in applicationssuch as wavelength, optical power and attenuation, drive current andvoltage, temperature sensitivity and modulation bandwidth.The next chapter of the introduction is dedicated to various kinds ofsemiconductor lasers. It describes the physical principles, steady stateoperation and the dynamical response. The laser is essentially an opticalcavity consisting of a material with optical gain inbetween two reflectivemirrors. Special attention is given to the spectral shape of the mirrorreflectivity and its effect on the laser dynamics and how these effects canbe distinguished from those of the gain material.In order to improve dynamic performance, it is common that the laser,instead of being directly modulated by varying the drive current, isconnected to a separate modulator. The next chapter is therefore devotedto electroabsorption modulators for high speed intensity modulation andtheir integration to lasers. In order to fully take advantage of the highintrinsic modulation bandwidth of these devices it is important to havea good microwave design to avoid electrical parasitics. A segmented paddesign to achieve this is briefly described.The last part of the introduction covers measurements techniques that wereimplemented to experimentally investigate above devices. A description ofthe measurement methods, including practical hints and methods forevaluation of the measured results are provided.

Place, publisher, year, edition, pages
Stockholm: KTH, 2009. xii, 72 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2009:8
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-11149 (URN)
Public defence
2009-09-30, KTH-Electrum, sal/ hall C2, Isafjordsgatan 26, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20100707Available from: 2009-09-22 Created: 2009-09-22 Last updated: 2010-07-21Bibliographically approved

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Schatz, RichardWestergren, UrbanHammar, Mattias

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Chacinski, MarekSchatz, RichardWestergren, UrbanBerggren, JesperYu, X.Marcks Von Würtemberg, RichardHammar, Mattias
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