Dynamic properties of electrically p-n confined, epitaxially regrown 1.27 μm InGaAs single-mode vertical-cavity surface-emitting lasers
2009 (English)In: IET optoelectronics, ISSN 1751-8768, Vol. 3, no 3, 163-167 p.Article in journal (Refereed) Published
The dynamic performance including chirp measurements of 1.27 mu m single-mode InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a large gain-cavity offset is presented. The VCSELs are based on a novel p-n confinement structure with selective area epitaxial regrowth. A resonance frequency of 9.11 GHz, a slope efficiency of 0.25 W/A and an alpha-factor of 5.7 were measured. The modulation bandwidth is limited by electrical parasitics. Eye diagrams at 5 Gb/s with 7 dB extinction ratio and Q-factor around 5 were obtained. The results are compared with the performance of oxide-confined VCSELs with similar active layer and negative gain-cavity detuning.
Place, publisher, year, edition, pages
2009. Vol. 3, no 3, 163-167 p.
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-11146DOI: 10.1049/iet-opt.2008.0066ISI: 000267060300006ScopusID: 2-s2.0-65949122752OAI: oai:DiVA.org:kth-11146DiVA: diva2:236375
QC 201007072009-09-222009-09-222010-09-09Bibliographically approved