Strain-induced Stranski-Krastanov three dimensional growth mode of GaSb quantum dot on GaAs substrate
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, no 181913Article in journal (Refereed) Published
The growth dynamics of self-assembled GaSb quantum dots (QDs) on GaAs substrate was investigated using kinetic Monte Carlo method. The strain induced by the lattice mismatch between the epitaxial material and the substrate was shown to be directly responsible for the three-dimensional QD formation. Different geometries of the initial seeds on the surface which are equally favorable from an energy point of view can result in different GaSb nanostructures (nanostrips and nanoring).
Place, publisher, year, edition, pages
2009. Vol. 94, no 181913
gallium arsenide; gallium compounds; III-V semiconductors; Monte Carlo methods; nanostructured materials; nanotechnology; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots
IdentifiersURN: urn:nbn:se:kth:diva-11453DOI: 10.1063/1.3132054ISI: 000265933700024ScopusID: 2-s2.0-65549131977OAI: oai:DiVA.org:kth-11453DiVA: diva2:276201
QC 201007132009-11-112009-11-112010-12-06Bibliographically approved