Wafer-Scale Manufacturing of Bulk Shape-Memory-Alloy Microactuators Based on Adhesive Bonding of Titanium-Nickel Sheets to Structured Silicon Wafers
2009 (English)In: Journal of microelectromechanical systems, ISSN 1057-7157, E-ISSN 1941-0158, Vol. 18, no 6, 1309-1317 p.Article in journal (Refereed) Published
This paper presents a concept for the wafer-scale manufacturing of microactuators based on the adhesive bonding of bulk shape-memory-alloy (SMA) sheets to silicon microstructures. Wafer-scale integration of a cold-state deformation mechanism is provided by the deposition of stressed films onto the SMA sheet. A concept for heating of the SMA by Joule heating through a resistive heater layer is presented. Critical fabrication issues were investigated, including the cold-state deformation, the bonding scheme and related stresses, and the titanium-nickel (TiNi) sheet patterning. Novel methods for the transfer stamping of adhesive and for the handling of the thin TiNi sheets were developed, based on the use of standard dicing blue tape. First demonstrator TiNi cantilevers, wafer-level adhesively bonded on a microstructured silicon substrate, were successfully fabricated and evaluated. Intrinsically stressed silicon dioxide and silicon nitride were deposited using plasma-enhanced chemical vapor deposition to deform the cantilevers in the cold state. Tip deflections for 2.5-mm-long cantilevers in cold/hot state of 250/70 and 125/28 mu m were obtained using silicon dioxide and silicon nitride, respectively. The bond strength proved to be stronger than the force created by the 2.5-mm-long TiNi cantilever and showed no degradation after more than 700 temperature cycles. The shape-memory behavior of the TiNi is maintained during the integration process.
Place, publisher, year, edition, pages
2009. Vol. 18, no 6, 1309-1317 p.
STRESS HYSTERESIS; HYBRID-COMPOSITES; DIELECTRIC FILMS; SMART SYSTEMS; PART II; MICROVALVES; MEMS
IdentifiersURN: urn:nbn:se:kth:diva-11828DOI: 10.1109/jmems.2009.2035368ISI: 000272318900016ScopusID: 2-s2.0-71549169015OAI: oai:DiVA.org:kth-11828DiVA: diva2:284096