Localized removal of the Au-Si eutectic bonding layer for the selective release of microstructures
2009 (English)In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 19, no 10, 105014-105023 p.Article in journal (Refereed) Published
This paper presents and investigates a novel technique for the footprint and thickness-independent selective release of Au–Si eutectically bonded microstructures through the localized removal of their eutectic bond interface. The technique is based on the electrochemical removal of the gold in the eutectic layer and the selectivity is provided by patterning the eutectic layer and by proper electrical connection or isolation of the areas to be etched or removed, respectively. The gold removal results in a porous silicon layer, acting similar to standard etch holes in a subsequent sacrificial release etching. The paper presents the principle and the design requirements of the technique. First test devices were fabricated and the method successfully demonstrated. Furthermore, the paper investigates the release mechanism and the effects of different gold layouts on both the eutectic bonding and the release procedure.
Place, publisher, year, edition, pages
Institute of Physics (IOP), 2009. Vol. 19, no 10, 105014-105023 p.
IdentifiersURN: urn:nbn:se:kth:diva-11830DOI: 10.1088/0960-1317/19/10/105014ISI: 000270133900014ScopusID: 2-s2.0-70350630503OAI: oai:DiVA.org:kth-11830DiVA: diva2:284100