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An investigation on hydride VPE growth and properties of semi-insulating InP:Fe
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
1990 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 19, no 9, 981-987 p.Article in journal (Refereed) Published
Abstract [en]

Growth of highly resistive semi-insulating InP : Fe has been achieved by the Hydride VPE technique in an ambient consisting mostly of nitrogen. After dealing with some thermodynamic considerations pertinent to InP:Fe growth, the experimental growth parameters are described. It is shown that various amounts of iron can be introduced into the InP crystal just by varying the temperature of the iron source. The crystal quality of the grown material is estimated to be good by etch pit density and x-ray diffraction analyses. Current-voltage behaviour and capacitance studies on an n+-SI-n+ structure are explained by invoking the theory of current injection in solids by Lampert and Mark: the experimental current densities at the threshold of each observed regime are compared with the theoretically derived current densities; in the absence of current injection, the measured capacitance is found to be the same as the geometrical capacitance.

Place, publisher, year, edition, pages
1990. Vol. 19, no 9, 981-987 p.
Keyword [en]
crystal quality; electrical properties; InP; kinetics; semiinsulating compounds; thermodynamics; VPE; Semiconducting Indium Phosphide
Identifiers
URN: urn:nbn:se:kth:diva-12509DOI: 10.1007/BF02652925OAI: oai:DiVA.org:kth-12509DiVA: diva2:315699
Note
QC 20100429Available from: 2010-04-29 Created: 2010-04-29 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Design, fabrication and analysis of high speed semiconductor lasers for optical communication
Open this publication in new window or tab >>Design, fabrication and analysis of high speed semiconductor lasers for optical communication
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. 35 p.
Series
Trita-MVT, ISSN 0348-4467 ; 9703
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2589 (URN)99-2488536-8 (ISBN)
Public defence
1997-12-03, 00:00 (English)
Note
QC 20100429Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-07Bibliographically approved

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