An investigation on hydride VPE growth and properties of semi-insulating InP:Fe
1990 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 19, no 9, 981-987 p.Article in journal (Refereed) Published
Growth of highly resistive semi-insulating InP : Fe has been achieved by the Hydride VPE technique in an ambient consisting mostly of nitrogen. After dealing with some thermodynamic considerations pertinent to InP:Fe growth, the experimental growth parameters are described. It is shown that various amounts of iron can be introduced into the InP crystal just by varying the temperature of the iron source. The crystal quality of the grown material is estimated to be good by etch pit density and x-ray diffraction analyses. Current-voltage behaviour and capacitance studies on an n+-SI-n+ structure are explained by invoking the theory of current injection in solids by Lampert and Mark: the experimental current densities at the threshold of each observed regime are compared with the theoretically derived current densities; in the absence of current injection, the measured capacitance is found to be the same as the geometrical capacitance.
Place, publisher, year, edition, pages
1990. Vol. 19, no 9, 981-987 p.
crystal quality; electrical properties; InP; kinetics; semiinsulating compounds; thermodynamics; VPE; Semiconducting Indium Phosphide
IdentifiersURN: urn:nbn:se:kth:diva-12509DOI: 10.1007/BF02652925OAI: oai:DiVA.org:kth-12509DiVA: diva2:315699
QC 201004292010-04-292010-04-292010-05-07Bibliographically approved