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1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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1991 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 59, no 3, 235-255 p.Article in journal (Refereed) Published
Abstract [en]

A GaInAsP/InP Fabry-Perot-type buried-heterostructure quantum well laser operating at 1.55 μm has been realized utilizing iron-doped semi-insulating InP around vertical mesas fabricated by reactive ion etching using methane and hydrogen. A maximum cw output power of 19 mW has been achieved on as-cleaved chips of 300 μm length with a quantum efficiency of 21% per facet. Threshold currents lie between 20 and 25 mA. As low as 2 Ω series resistance has been measured despite an ohmic contact area not exceeding that of the 2-μm-wide mesa. A 3 dB bandwidth of 7.5 GHz at 12 mW output power is obtained from the small-signal frequency modulation measurements.

Place, publisher, year, edition, pages
1991. Vol. 59, no 3, 235-255 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-12510DOI: 10.1063/1.105612OAI: oai:DiVA.org:kth-12510DiVA: diva2:315721
Note

QC 20100429

Available from: 2010-04-29 Created: 2010-04-29 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Design, fabrication and analysis of high speed semiconductor lasers for optical communication
Open this publication in new window or tab >>Design, fabrication and analysis of high speed semiconductor lasers for optical communication
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. 35 p.
Series
Trita-MVT, ISSN 0348-4467 ; 9703
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2589 (URN)99-2488536-8 (ISBN)
Public defence
1997-12-03, 00:00 (English)
Note
QC 20100429Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-07Bibliographically approved

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Lourdudoss, Sebastian

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