1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen
1991 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 59, no 3, 235-255 p.Article in journal (Refereed) Published
A GaInAsP/InP Fabry-Perot-type buried-heterostructure quantum well laser operating at 1.55 μm has been realized utilizing iron-doped semi-insulating InP around vertical mesas fabricated by reactive ion etching using methane and hydrogen. A maximum cw output power of 19 mW has been achieved on as-cleaved chips of 300 μm length with a quantum efficiency of 21% per facet. Threshold currents lie between 20 and 25 mA. As low as 2 Ω series resistance has been measured despite an ohmic contact area not exceeding that of the 2-μm-wide mesa. A 3 dB bandwidth of 7.5 GHz at 12 mW output power is obtained from the small-signal frequency modulation measurements.
Place, publisher, year, edition, pages
1991. Vol. 59, no 3, 235-255 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-12510DOI: 10.1063/1.105612OAI: oai:DiVA.org:kth-12510DiVA: diva2:315721
QC 201004292010-04-292010-04-292014-10-03Bibliographically approved