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Temporally resolved selective regrowth of InP around [110] and [110] mesas
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0977-2598
KTH, Superseded Departments, Electronics.
KTH, Superseded Departments, Electronics.
KTH, Superseded Departments, Electronics.
1996 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 25, no 3, 389-394 p.Article in journal (Refereed) Published
Abstract [en]

Temporally resolved selective regrowth of InP around reactive ion etched [110] and [110] directional mesas is studied by hydride vapor phase epitaxy at the growth temperatures of 600, 650, 685, and 700°C. The regrowth profiles are strikingly different depending upon the mesa orientation. The results are interpreted by invoking the difference in the bonding configurations of these mesas as well as the growth facility in a direction leading to the largest reduction of dangling bonds under the growth conditions. Various emerging planes during regrowth are identified and are {hhl} planes with initial values of l/h ≤ 3 but ≥ 3 as the planarization is approached. Initial lateral growth defined as the growth away from the mesa at half of its height in the very first minute is a decreasing function of temperature when plotted as Arrhenius curves. Such a behavior is attributed to the exothermicity of the reaction and to an enhanced pyrolysis of PH3 to P2. The lateral growth rate is much larger than that on the planar substrate. This should be taken into account when regrowth of a doped layer (e.g. InP:Fe or InP:Zn) is carried out to fabricate a buried heterostructure device since the dopant concentration can be very much lower than the one optimized on the planar substrates.

Place, publisher, year, edition, pages
1996. Vol. 25, no 3, 389-394 p.
Keyword [en]
III-V compounds; InP; Patterned substrates; Reactive ion etching; Selective epitaxy; Selective regrowth
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-12516OAI: oai:DiVA.org:kth-12516DiVA: diva2:317217
Note
QC 20100503Available from: 2010-05-03 Created: 2010-05-03 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Design, fabrication and analysis of high speed semiconductor lasers for optical communication
Open this publication in new window or tab >>Design, fabrication and analysis of high speed semiconductor lasers for optical communication
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. 35 p.
Series
Trita-MVT, ISSN 0348-4467 ; 9703
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2589 (URN)99-2488536-8 (ISBN)
Public defence
1997-12-03, 00:00 (English)
Note
QC 20100429Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-07Bibliographically approved

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Lourdudoss, Sebastian

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