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Multi quantum well 1.55 μm DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection
KTH, Superseded Departments, Electronics.
KTH, Superseded Departments, Electronics.
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0977-2598
KTH, Superseded Departments, Electronics.
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1994 (English)In:  Semiconductor Laser Conference, 1994: 14th IEEE International, 1994, 221-222 p.Conference paper, Published paper (Other academic)
Abstract [en]

Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA1/2 and high maximum bandwidth, 21.7 GHz, have been fabricated

Place, publisher, year, edition, pages
1994. 221-222 p.
Keyword [en]
III-V semiconductors, distributed feedback lasers, gallium arsenide, gallium compounds, indium compounds, quantum well lasers
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-12521DOI: 10.1109/ISLC.1994.519343ISBN: 0-7803-1754-8 (print)OAI: oai:DiVA.org:kth-12521DiVA: diva2:317242
Note
QC 20100503Available from: 2010-05-03 Created: 2010-05-03 Last updated: 2010-05-07Bibliographically approved
In thesis
1. Design, fabrication and analysis of high speed semiconductor lasers for optical communication
Open this publication in new window or tab >>Design, fabrication and analysis of high speed semiconductor lasers for optical communication
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. 35 p.
Series
Trita-MVT, ISSN 0348-4467 ; 9703
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2589 (URN)99-2488536-8 (ISBN)
Public defence
1997-12-03, 00:00 (English)
Note
QC 20100429Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-07Bibliographically approved

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Lourdudoss, Sebastian

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