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Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Photonics)ORCID iD: 0000-0003-3056-4678
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0977-2598
KTH, Superseded Departments, Electronics.
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1996 (English)In: Proc. SPIE, Vol. 2684, 1996, 138-152 p.Conference paper, Published paper (Other academic)
Abstract [en]

Resultsfrom modulation measurements of 40 high-speed multi quantum well (MQW)lasers ((lambda) equals 1.55 micrometer) of various designs are presented.By fitting the careful calibrated measurements, both magnitude and phase,to an analytical transfer function we were able to determineif a certain laser was limited by thermal effects, parasitic-likeeffects, or nonlinear gain effects. We found that most ofthe devices in the study were limited by thermal effectsand/or contact parasitics. The parasitics were found to be determinedby the width of the high-doped contact layer and claddinglayers below the metallic contact. It was also found thata high doping of the separate confinement heterostructure (SCH) layersdecreases the damping of the relaxation peak since it facilitatesthe carrier transport. Improved contact design and high doped SCH-layersresulted in modulation bandwidths of around 24 GHz.

Place, publisher, year, edition, pages
1996. 138-152 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-12522DOI: 10.1117/12.236941OAI: oai:DiVA.org:kth-12522DiVA: diva2:317254
Conference
SPIE
Note
QC 20100503 NR 20140804Available from: 2010-05-03 Created: 2010-05-03 Last updated: 2012-02-14Bibliographically approved
In thesis
1. Design, fabrication and analysis of high speed semiconductor lasers for optical communication
Open this publication in new window or tab >>Design, fabrication and analysis of high speed semiconductor lasers for optical communication
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. 35 p.
Series
Trita-MVT, ISSN 0348-4467 ; 9703
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2589 (URN)99-2488536-8 (ISBN)
Public defence
1997-12-03, 00:00 (English)
Note
QC 20100429Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-07Bibliographically approved

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Schatz, RichardLourdudoss, Sebastian

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