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30GHz direct modulation bandwidth indetuned loaded InGaAsP DBR lasers at1.55 μm wavelength
KTH, Superseded Departments, Electronics.
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0003-3056-4678
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0977-2598
KTH, Superseded Departments, Electronics.
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1997 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 33, 488-489 p.Article in journal (Refereed) Published
Abstract [en]

An increased resonance frequency and reduced damping of theresonance peak leading to a record high modulation bandwidth of30GHz were observed in 1.55 mm InGaAsP DBR lasers. Theseresults are attributed to the mechanism of detuned loading.

Place, publisher, year, edition, pages
1997. Vol. 33, 488-489 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-12530OAI: oai:DiVA.org:kth-12530DiVA: diva2:317589
Note
QC 20100504Available from: 2010-05-04 Created: 2010-05-04 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Design, fabrication and analysis of high speed semiconductor lasers for optical communication
Open this publication in new window or tab >>Design, fabrication and analysis of high speed semiconductor lasers for optical communication
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. 35 p.
Series
Trita-MVT, ISSN 0348-4467 ; 9703
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2589 (URN)99-2488536-8 (ISBN)
Public defence
1997-12-03, 00:00 (English)
Note
QC 20100429Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-07Bibliographically approved

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Schatz, RichardLourdudoss, Sebastian

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