Sputter profiling of AlGaAs/GaAs superlattice structures using oxygen and argon ions
1993 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 70-71, no 1, 40-43 p.Article in journal (Refereed) Published
Broadening of Al sputter profiles in AlxGa1-xAs/GaAs structures has been investigated using secondary ion mass spectrometry. The depth profiling was carried out with 32O+2 ions and 40Ar+ ions using net primary energies of 1.8, 2.2, 3.2 and 5.7 keV. The decay lengths of the Al profiles show a pronounced increase with increasing sputtering ion energy caused by ballistic mixing. Moreover, in the O+2 case the λ-values degrade with eroded depth, indicating that beam-induced surface roughening takes place during profiling and in particular, this holds for high x-values. The results are discussed in terms of a semi-empirical model for ion-beam-induced broadening developed by Zalm and Vriezema.
Place, publisher, year, edition, pages
1993. Vol. 70-71, no 1, 40-43 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-13011DOI: 10.1016/0169-4332(93)90394-QOAI: oai:DiVA.org:kth-13011DiVA: diva2:320199
QC 201005242010-05-242010-05-242010-05-24Bibliographically approved