Influence of layer thickness and primary ion on profile broadening during sputtering of Al0.5Ga0.5As/GaAs structures
1994 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 85, no 1-4, 395-398 p.Article in journal (Refereed) Published
Broadening of secondary ion mass spectrometry depth profiles for Al in Al0.5Ga0.5As/GaAs structures, where the layer thicknesses vary from two monolayers to 1000 Å, is investigated. The experiments were performed in the net primary energy range 1.8–13.2 keV with 40Ar+ ions and 84Kr+ ions. The broadening is mainly determined by ballistic mixing, and no dependence on the Al0.5Ga0.5As layer thickness is revealed. Good agreement is found with a semi-empirical mixing model published recently by Zalm and Vriezema and [Nucl. Instr. and Meth. B 67 (1992) 467] although a small contribution from surface roughness occurs. The surface roughness develops initially but saturates already after the first Al0.5Ga0.5As layer.
Place, publisher, year, edition, pages
1994. Vol. 85, no 1-4, 395-398 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-13013DOI: 10.1016/0168-583X(94)95852-1OAI: oai:DiVA.org:kth-13013DiVA: diva2:320206
QC 201005242010-05-242010-05-242010-05-24Bibliographically approved