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Influence of layer thickness and primary ion on profile broadening during sputtering of Al0.5Ga0.5As/GaAs structures
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0292-224X
KTH, Superseded Departments, Electronics.
1994 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 85, no 1-4, 395-398 p.Article in journal (Refereed) Published
Abstract [en]

Broadening of secondary ion mass spectrometry depth profiles for Al in Al0.5Ga0.5As/GaAs structures, where the layer thicknesses vary from two monolayers to 1000 Å, is investigated. The experiments were performed in the net primary energy range 1.8–13.2 keV with 40Ar+ ions and 84Kr+ ions. The broadening is mainly determined by ballistic mixing, and no dependence on the Al0.5Ga0.5As layer thickness is revealed. Good agreement is found with a semi-empirical mixing model published recently by Zalm and Vriezema and [Nucl. Instr. and Meth. B 67 (1992) 467] although a small contribution from surface roughness occurs. The surface roughness develops initially but saturates already after the first Al0.5Ga0.5As layer.

Place, publisher, year, edition, pages
1994. Vol. 85, no 1-4, 395-398 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-13013DOI: 10.1016/0168-583X(94)95852-1OAI: oai:DiVA.org:kth-13013DiVA: diva2:320206
Note
QC 20100524Available from: 2010-05-24 Created: 2010-05-24 Last updated: 2010-05-24Bibliographically approved
In thesis
1. Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
Open this publication in new window or tab >>Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. viii, 48 p.
Series
Trita-FTE, ISSN 0284-0545 ; 1997:10
Keyword
secondary ion mass spectrometry (SIMS), cascade mixing, redistribution, diffusion, defects, passivation, SiC, A1xGa1-xAs
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2545 (URN)99-2452010-6 (ISBN)
Public defence
1997-09-08, 00:00 (English)
Note
QC 20100524Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-24Bibliographically approved

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Linnarsson, Margareta K.

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