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Cascade mixing in AlxGa1-xAs/GaAs during sputter profiling by noble-gas ions
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0292-224X
KTH, Superseded Departments, Electronics.
1999 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 60, no 20, 14302-14310 p.Article in journal (Refereed) Published
Abstract [en]

The effect of cascade mixing on profile broadening during secondary-ion mass spectrometry (SIMS) analysis has been thoroughly investigated for AlxGa1-xAs/GaAs structures of five different compositions (x=0.1, 0.3, 0.5, 0.73, or 1) and layers with varying thicknesses (from one monolayer to 1000 Å). The SIMS analyses were performed using primary sputtering ions of 20Ne+, 40Ar+, 84Kr+, and 136Xe+ with an impact energy (E) ranging from 1.8 to 13.2 keV and an angle of incidence, with respect to the surface normal (θ), from 62° to 35°. Within the experimental accuracy, the decay length of the trailing edge was found to be proportional to E1/2cosθ where the proportionality constant displays a relatively weak dependence on primary ion mass. However, the leading edge is strongly affected by the extension of the collision cascade as demonstrated by a comparison of the results for the different ions at a given energy. As long as the cascade is fully developed before reaching an interface no dependence on the sample depth is obtained for the profile broadening. Furthermore, the decay length for the trailing edges is extracted in the dilute limit and no effect of the marker thickness or the x value is revealed. A numerical treatment of the profile broadening within a diffusional model, where the diffusion coefficient is assumed to be proportional to the energy deposited in elastic collisions, gives a surprisingly good agreement with the experimental data.

Place, publisher, year, edition, pages
1999. Vol. 60, no 20, 14302-14310 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-13017DOI: 10.1103/PhysRevB.60.14302OAI: oai:DiVA.org:kth-13017DiVA: diva2:320212
Note
QC 20100524Available from: 2010-05-24 Created: 2010-05-24 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
Open this publication in new window or tab >>Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. viii, 48 p.
Series
Trita-FTE, ISSN 0284-0545 ; 1997:10
Keyword
secondary ion mass spectrometry (SIMS), cascade mixing, redistribution, diffusion, defects, passivation, SiC, A1xGa1-xAs
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2545 (URN)99-2452010-6 (ISBN)
Public defence
1997-09-08, 00:00 (English)
Note
QC 20100524Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-24Bibliographically approved

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Linnarsson, Margareta K.

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