Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Diffusion of hydrogen in 6H silicon carbide
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0292-224X
KTH, Superseded Departments, Electronics.
1996 (English)In: III-nitride, SiC and diamond materials for electronic devices: Proceedings of the Symposium, San Francisco, CA; UNITED STATES; 8-12 Apr. 1996., 1996, 625-630 p.Conference paper, Published paper (Other academic)
Abstract [en]

6H polytype silicon carbide (SiC) samples of n-type have been implanted with 50-keV H(+) ions and subsequently annealed at temperatures between 200 and 1150 C. Using depth profiling by secondary ion mass spectrometry, the motion of hydrogen is observed in the implanted region for temperatures above 700 C. A diffusion coefficient of about 10 exp -14 sq cm/s is extracted at 800 C with an approximate activation energy of about 3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects, and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900 C, and are tentatively identified as carbon-hydrogen centers at a Si vacancy.

Place, publisher, year, edition, pages
1996. 625-630 p.
Keyword [en]
SILICON CARBIDES, HYDROGEN IONS, IONIC DIFFUSION, N-TYPE SEMICONDUCTORS, DIFFUSION COEFFICIENT, CRYSTAL DEFECTS, GASEOUS DIFFUSION, ANNEALING, MASS SPECTROSCOPY
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-13019OAI: oai:DiVA.org:kth-13019DiVA: diva2:320218
Note
QC 20100524Available from: 2010-05-24 Created: 2010-05-24 Last updated: 2010-05-24Bibliographically approved
In thesis
1. Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
Open this publication in new window or tab >>Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. viii, 48 p.
Series
Trita-FTE, ISSN 0284-0545 ; 1997:10
Keyword
secondary ion mass spectrometry (SIMS), cascade mixing, redistribution, diffusion, defects, passivation, SiC, A1xGa1-xAs
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2545 (URN)99-2452010-6 (ISBN)
Public defence
1997-09-08, 00:00 (English)
Note
QC 20100524Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-24Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Linnarsson, Margareta K.

Search in DiVA

By author/editor
Linnarsson, Margareta K.
By organisation
Electronics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 87 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf