Diffusion of hydrogen in 6H silicon carbide
1996 (English)In: III-nitride, SiC and diamond materials for electronic devices: Proceedings of the Symposium, San Francisco, CA; UNITED STATES; 8-12 Apr. 1996., 1996, 625-630 p.Conference paper (Other academic)
6H polytype silicon carbide (SiC) samples of n-type have been implanted with 50-keV H(+) ions and subsequently annealed at temperatures between 200 and 1150 C. Using depth profiling by secondary ion mass spectrometry, the motion of hydrogen is observed in the implanted region for temperatures above 700 C. A diffusion coefficient of about 10 exp -14 sq cm/s is extracted at 800 C with an approximate activation energy of about 3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects, and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900 C, and are tentatively identified as carbon-hydrogen centers at a Si vacancy.
Place, publisher, year, edition, pages
1996. 625-630 p.
SILICON CARBIDES, HYDROGEN IONS, IONIC DIFFUSION, N-TYPE SEMICONDUCTORS, DIFFUSION COEFFICIENT, CRYSTAL DEFECTS, GASEOUS DIFFUSION, ANNEALING, MASS SPECTROSCOPY
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-13019OAI: oai:DiVA.org:kth-13019DiVA: diva2:320218
QC 201005242010-05-242010-05-242010-05-24Bibliographically approved