Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Characterization of deep level defects in 4H and 6H SiC via DLTS, SIMS and MeV e-beam irradiation
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0292-224X
Show others and affiliations
1996 (English)In: III-nitride, SiC and diamond materials for electronic devices: Proceedings of the Symposium, San Francisco, CA; UNITED STATES; 8-12 Apr. 1996., 1996, 519-524 p.Conference paper, Published paper (Refereed)
Abstract [en]
Electrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by VPE with doping concentrations, the epitaxial layer having a doping concentration in the range of 10 exp 14/cu cm to 10 exp 17/cu cm. Numerous levels have been found in the as-grown n-type 6H-SiC samples, and SIMS and MeV electron irradiation have been employed to correlate the defect levels to impurities or structural defects. In contrast, only a single level is observed in the as-grown 4H-SiC samples.
Place, publisher, year, edition, pages
1996. 519-524 p.
Keyword [en]
SILICON CARBIDES, CRYSTAL DEFECTS, ELECTRON IRRADIATION, SCHOTTKY DIODES, VAPOR PHASE EPITAXY, MASS SPECTROSCOPY, ELECTRON BEAMS, TRANSIENT RESPONSE, TEMPERATURE DEPENDENCE
Identifiers
URN: urn:nbn:se:kth:diva-13026OAI: oai:DiVA.org:kth-13026DiVA: diva2:320279
Note
QC 20100524Available from: 2010-05-24 Created: 2010-05-24 Last updated: 2010-05-24Bibliographically approved
In thesis
1. Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
Open this publication in new window or tab >>Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. viii, 48 p.
Series
Trita-FTE, ISSN 0284-0545 ; 1997:10
Keyword
secondary ion mass spectrometry (SIMS), cascade mixing, redistribution, diffusion, defects, passivation, SiC, A1xGa1-xAs
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2545 (URN)99-2452010-6 (ISBN)
Public defence
1997-09-08, 00:00 (English)
Note
QC 20100524Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-24Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Linnarsson, Margareta K.Nordell, Nils

Search in DiVA

By author/editor
Linnarsson, Margareta K.Nordell, Nils
By organisation
Electronics

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 63 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf