Characterization of deep level defects in 4H and 6H SiC via DLTS, SIMS and MeV e-beam irradiation
1996 (English)In: III-nitride, SiC and diamond materials for electronic devices: Proceedings of the Symposium, San Francisco, CA; UNITED STATES; 8-12 Apr. 1996., 1996, 519-524 p.Conference paper (Refereed)
Electrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by VPE with doping concentrations, the epitaxial layer having a doping concentration in the range of 10 exp 14/cu cm to 10 exp 17/cu cm. Numerous levels have been found in the as-grown n-type 6H-SiC samples, and SIMS and MeV electron irradiation have been employed to correlate the defect levels to impurities or structural defects. In contrast, only a single level is observed in the as-grown 4H-SiC samples.
Place, publisher, year, edition, pages
1996. 519-524 p.
SILICON CARBIDES, CRYSTAL DEFECTS, ELECTRON IRRADIATION, SCHOTTKY DIODES, VAPOR PHASE EPITAXY, MASS SPECTROSCOPY, ELECTRON BEAMS, TRANSIENT RESPONSE, TEMPERATURE DEPENDENCE
IdentifiersURN: urn:nbn:se:kth:diva-13026OAI: oai:DiVA.org:kth-13026DiVA: diva2:320279
QC 201005242010-05-242010-05-242010-05-24Bibliographically approved