LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS
1993 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 48, no 16, 12345-12348 p.Article in journal (Refereed) Published
We report lithium passivation of the shallow acceptors Zn and Cd in p-type GaAs which we attribute to the formation of neutral Li-Zn and Li-Cd complexes. Similar to hydrogen, another group-I element, lithium strongly reduces the concentration of free holes when introduced into p-type GaAs. The passivation is inferred from an increase of both the hole mobility and the resisitivity throughout the bulk of the sample. It is observed most clearly for Li concentrations comparable to the shallow-acceptor concentration. In addition, compensation of shallow acceptors by randomly distributed donors is present in varying degree in the Li-diffused samples. Unlike hydrogenation of n-type GaAs, Li doping shows no evidence of neutralizing shallow donors in GaAs.
Place, publisher, year, edition, pages
1993. Vol. 48, no 16, 12345-12348 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-13027ISI: A1993ME60100109OAI: oai:DiVA.org:kth-13027DiVA: diva2:320282
QC 201005242010-05-242010-05-242010-05-24Bibliographically approved