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LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0292-224X
1993 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 48, no 16, 12345-12348 p.Article in journal (Refereed) Published
Abstract [en]

We report lithium passivation of the shallow acceptors Zn and Cd in p-type GaAs which we attribute to the formation of neutral Li-Zn and Li-Cd complexes. Similar to hydrogen, another group-I element, lithium strongly reduces the concentration of free holes when introduced into p-type GaAs. The passivation is inferred from an increase of both the hole mobility and the resisitivity throughout the bulk of the sample. It is observed most clearly for Li concentrations comparable to the shallow-acceptor concentration. In addition, compensation of shallow acceptors by randomly distributed donors is present in varying degree in the Li-diffused samples. Unlike hydrogenation of n-type GaAs, Li doping shows no evidence of neutralizing shallow donors in GaAs.

Place, publisher, year, edition, pages
1993. Vol. 48, no 16, 12345-12348 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-13027ISI: A1993ME60100109OAI: oai:DiVA.org:kth-13027DiVA: diva2:320282
Note
QC 20100524Available from: 2010-05-24 Created: 2010-05-24 Last updated: 2010-05-24Bibliographically approved
In thesis
1. Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
Open this publication in new window or tab >>Compound semiconductors: defects and relocation of atoms during growth sputtering and diffusion
1997 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 1997. viii, 48 p.
Series
Trita-FTE, ISSN 0284-0545 ; 1997:10
Keyword
secondary ion mass spectrometry (SIMS), cascade mixing, redistribution, diffusion, defects, passivation, SiC, A1xGa1-xAs
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-2545 (URN)99-2452010-6 (ISBN)
Public defence
1997-09-08, 00:00 (English)
Note
QC 20100524Available from: 2000-01-01 Created: 2000-01-01 Last updated: 2010-05-24Bibliographically approved

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LINNARSSON, MARGARETA K.

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