Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Graphene nanoribbon as a negative differential resistance device
KTH, School of Biotechnology (BIO), Theoretical Chemistry.
KTH, School of Biotechnology (BIO), Theoretical Chemistry.ORCID iD: 0000-0003-0007-0394
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, no 17, 173110- p.Article in journal (Refereed) Published
Abstract [en]

We present a theoretical study on electronic structure and elastic transport properties of armchair graphene nanoribbon based junctions by using density functional theory calculations and nonequilibrium Green's function technique. The I-V characteristics of various junctions are examined, which all exhibit robust negative differential resistance (NDR) phenomena. It is found that such NDR behaviors originate from the interaction between the narrow density of states of the doped leads and the discrete states in the scattering region.

Place, publisher, year, edition, pages
2009. Vol. 94, no 17, 173110- p.
Keyword [en]
density functional theory; electronic density of states; graphene; Green's function methods; impurity states; nanocontacts; nanoelectronics; negative resistance devices; nitrogen; semiconductor devices; semiconductor materials
Identifiers
URN: urn:nbn:se:kth:diva-13055DOI: 10.1063/1.3126451ISI: 000265738700069Scopus ID: 2-s2.0-65449166838OAI: oai:DiVA.org:kth-13055DiVA: diva2:320454
Note
QC20100525Available from: 2010-05-25 Created: 2010-05-25 Last updated: 2017-12-12Bibliographically approved
In thesis
1. First principles simulations of electron transport at the molecule-solid interface
Open this publication in new window or tab >>First principles simulations of electron transport at the molecule-solid interface
2010 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In this thesis I concentrate on the description of electron transport properties of microscopic objects, including molecular junctions and nano junctions, in particular, inelastic electron tunneling in surface-adsorbate systems are examined with more contemplations. Boosted by the rapid advance in experimental techniques at the microscopic scale, various electric experiments and measurements sprung up in the last decade. Electric devices, such as transistors, switches, wires, etc. are expected to be integrated into circuit and performing like traditional semiconductor integrated circuit (IC). On the other hand, detailed information about transport properties also provides new physical observable quantities to characterize the systems. For molecular electronics, which is in the state of growing up, its further applications demands more thorough understanding of the underlying mechanism, for instance, the effects of molecular configuration and conformation, inter- or intra-molecular interactions, molecular-substrate interactions, and so on. Inelastic electron tunneling spectroscopy (IETS), which reflects vibration features of the system, is also a finger print property, and can thus be employed to afford the responsibility of single molecular identification with the help of other experimental techniques and theoretical simulations.There are two parts of work presented in this thesis, the first one is devoted to the calculation of electron transport properties of molecular or nano junctions: we have designed a negative differential resistance (NDR) device based on graphene nanoribbons (GNRs), where the latter is a star material in scientific committee since its birth;The transport properties of DNA base-pair junctions are also examined by theoretical calculation, relevant experimental results on DNA sequencing have been explained and detailed issues are suggested.The second part focused on the simulation of scanning tunneling microscope mediated IETS (STM-IETS). We have implemented a numerical scheme to calculate the inelastic tunneling intensity based on Tersoff-Hamann approximation and finite difference method, benchmark results agree well with experimental and previous theoretical ones; Two applications of single molecular chemical identification are also presented following benchmarking.

Place, publisher, year, edition, pages
Stockholm: KTH, 2010. xii, 70 p.
Series
Trita-BIO-Report, ISSN 1654-2312 ; 2010:8
Keyword
first principles, electron transport, solid surface, inelastic electron tunneling
National Category
Theoretical Chemistry
Identifiers
urn:nbn:se:kth:diva-12870 (URN)978-91-7415-629-4 (ISBN)
Public defence
2010-06-10, FB54, Roslagstullsbacken 21, Albanova University Center, Stockholm, 10:00 (English)
Opponent
Supervisors
Note
QC20100630Available from: 2010-05-25 Created: 2010-05-18 Last updated: 2012-03-27Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopusApplied Physics Letters

Authority records BETA

Luo, Yi

Search in DiVA

By author/editor
Ren, HaoLuo, Yi
By organisation
Theoretical Chemistry
In the same journal
Applied Physics Letters

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 73 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf