Graphene nanoribbon as a negative differential resistance device
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, no 17, 173110- p.Article in journal (Refereed) Published
We present a theoretical study on electronic structure and elastic transport properties of armchair graphene nanoribbon based junctions by using density functional theory calculations and nonequilibrium Green's function technique. The I-V characteristics of various junctions are examined, which all exhibit robust negative differential resistance (NDR) phenomena. It is found that such NDR behaviors originate from the interaction between the narrow density of states of the doped leads and the discrete states in the scattering region.
Place, publisher, year, edition, pages
2009. Vol. 94, no 17, 173110- p.
density functional theory; electronic density of states; graphene; Green's function methods; impurity states; nanocontacts; nanoelectronics; negative resistance devices; nitrogen; semiconductor devices; semiconductor materials
IdentifiersURN: urn:nbn:se:kth:diva-13055DOI: 10.1063/1.3126451ISI: 000265738700069ScopusID: 2-s2.0-65449166838OAI: oai:DiVA.org:kth-13055DiVA: diva2:320454