Avalanche injection in high voltage Si PiN diodes
1997 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T69, 134-137 p.Article in journal (Refereed) Published
An experimental technique using optical excitation by a YAG laser pulse for studying avalanche injection in power devices is demonstrated This technique enables the creation of high uniform excess carrier concentrations in an optically defined device volume, involving very little heating. A method for determining the onset of avalanche multiplication, by studying the time integral of the reverse recovery current, is proposed. A PiN diode is observed to turn off from avalanching at a dissipated power density of more than 200 kW/cm(2).
Place, publisher, year, edition, pages
1997. Vol. T69, 134-137 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-13085ISI: A1997WL40600024OAI: oai:DiVA.org:kth-13085DiVA: diva2:320774
QC 201005272010-05-272010-05-272010-05-27Bibliographically approved