Dynamic avalanche in 3.3-kV Si power diodes
1999 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 46, no 4, 781-786 p.Article in journal (Refereed) Published
Measurements of the safe reverse recovery limit were performed for 3.3-kV Si power diodes using a novel optical experimental technique. In this experiment, influence of the junction termination is effectively eliminated by optical generation of a laterally-localized carrier plasma. The turn-off failures observed in measurements at two temperatures showed no temperature dependence and could not be reproduced in ordinary one-dimensional (1-D) or two-dimensional (2-D) device simulations. To simulate the stability of the current density toward current filamentation, two 1-D diodes with an area ratio 1:19 and a 10% difference in initial carrier plasma level, were simulated in parallel. This resulted in a strongly inhomogeneous current distribution, and a rapid reverse voltage fall resembling the measured turn-off failures. Inhomogeneous current distribution in these simulations appears as the current decay ceases due to impact ionization, in qualitative agreement with a current instability condition proposed by Wachutka .
Place, publisher, year, edition, pages
1999. Vol. 46, no 4, 781-786 p.
dynamic avalanche, impact ionization, power diode, reverse recovery, SOA, turn-off failure
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-13088DOI: 10.1109/16.753714ISI: 000079394700024OAI: oai:DiVA.org:kth-13088DiVA: diva2:320779
QC 201005272010-05-272010-05-272010-05-27Bibliographically approved