Stable dynamic avalanche in Si power diodes
1999 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 74, no 21, 3170-3172 p.Article in journal (Refereed) Published
A stable dynamic avalanche at a maximum power density of about 2.4 MW/cm(2) was measured in small areas of 3.3 kV Si power diodes, using an optical measurement technique, and very good dynamic ruggedness was verified in a conventional turn-off measurement. Device simulations of a diode with a shallow n(+) emitter indicate that impact ionization at the nn(+) junction can result in negative differential resistance (NDR) and current filamentation, whereas a deep n(+) emitter in the experimentally studied diode suppresses NDR. It is, therefore, proposed that the deep n(+) emitter is important for the stable dynamic avalanche.
Place, publisher, year, edition, pages
1999. Vol. 74, no 21, 3170-3172 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-13089DOI: 10.1063/1.124097ISI: 000080467500031OAI: oai:DiVA.org:kth-13089DiVA: diva2:320780
QC 201005272010-05-272010-05-272010-05-27Bibliographically approved