Dynamic avalanche in Si power diodes and impact ionization at the nn(+) junction
2000 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 44, no 3, 477-485 p.Article in journal (Refereed) Published
The reverse recovery failure limit was measured with an optical technique for power diodes which sustain high levels of dynamic avalanche. Measurements and simulations indicate that these diodes withstand dynamic avalanche at the pn-junction and eventually fail as a result of a strongly inhomogeneous current distribution caused by the onset of impact ionisation at the diode nn(+) junction - a mechanism similar to the reverse bias second breakdown of bipolar transistors.
Place, publisher, year, edition, pages
2000. Vol. 44, no 3, 477-485 p.
TURN-OFF, TRANSISTORS, THYRISTORS, INJECTION
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-13090DOI: 10.1016/S0038-1101(99)00261-0ISI: 000085469300012OAI: oai:DiVA.org:kth-13090DiVA: diva2:320782
QC 201005272010-05-272010-05-272010-05-27Bibliographically approved