Dynamic avalanche and trapped charge in 4H-SiC diodes
2000 (English)In: SILICON CARBIDE AND RELATED MATERIALS: 1999 PTS, 1 & 2 / [ed] Carter CH; Devaty RP; Rohrer GS, 2000, Vol. 338-3, 1327-1330 p.Chapter in book (Other academic)
A dynamically reduced breakdown voltage from more than 2 kV under static conditions to 300 V during reverse recovery was measured for 4H-SiC p(+)nn(+) diodes. Device simulation indicates that deep hole-trapping donors in the n-base, close the pn junction, could explain the dynamically reduced breakdown voltage. Hole traps situated 0.66 eV above the valence band were found in the diode n-base by DLTS measurements.
Place, publisher, year, edition, pages
2000. Vol. 338-3, 1327-1330 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 338-3
carrier traps, dynamic avalanche, impact ionization, reverse recovery, DEEP, CENTERS, DEVICES
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-13091ISI: 000165996700323OAI: oai:DiVA.org:kth-13091DiVA: diva2:320784
QC 201005272010-05-272010-05-272010-05-27Bibliographically approved