Low-voltage high-isolation DC-to-RF MEMS switch based on an S-shaped film actuator
2004 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 51, no 1, 149-155 p.Article in journal (Refereed) Published
This paper presents a new electrostatically actuated microelectromechanical series switch for switching dc to radio frequency (RF) signals. The device is based on a flexible S-shaped film moving between a top and a bottom electrode in touch-mode actuation. This concept, in contrast to most other microelectrocheinical systems (MEMS) switches, allows a design with a low actuation voltage independent of the off-state gap height. This makes larger nominal switching contact areas for lower insertion loss possible, by obtaining high isolation in the off-state. The actuation voltages of the first prototype switches are 12 V to open, and 15.8 V to close the metal contact. The RF isolation with a gap distance of 14.2 mum is better than -45 dB up to 2 GHz and -30 dB at 15 GHz despite a large nominal switching contact area of 3500 mum(2).
Place, publisher, year, edition, pages
2004. Vol. 51, no 1, 149-155 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-13416DOI: 10.1109/TED.2003.820655ISI: 000187959600021ScopusID: 2-s2.0-0742286721OAI: oai:DiVA.org:kth-13416DiVA: diva2:325196
QC 201006172010-06-172010-06-172011-11-01Bibliographically approved