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Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.ORCID iD: 0000-0002-0977-2598
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
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2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 2, 705-707 p.Article in journal (Refereed) Published
Abstract [en]

We have developed a virtual GaN substrate on sapphire based on a two-step growth method. By optimizing the growth scheme for the virtual substrate we have improved crystal quality and reduced interface roughness. Our Al0.22Ga0.78N/GaN HEMT structure grown on the optimized semi-insulating GaN virtual substrate, exhibits Hall mobilities as high as 1720 and 7350 cm(2)/Vs and sheet carrier concentrations of 8.4 x 1012 and 10.0 x 1012 cm(-2) at 300 K and 20 K, respectively The presence of good AlGaN/GaN interface quality and surface morphology is also substantiated by X-Ray reflectivity and Atomic Force Microscopy measurements. A simplified transport model is used to fit the experimental Hall mobility.

Place, publisher, year, edition, pages
2006. Vol. 515, no 2, 705-707 p.
Keyword [en]
MOVPE, HEMT, scattering, interface roughness, X-ray reflectivity, dislocations, CHEMICAL-VAPOR-DEPOSITION, GAN, HETEROSTRUCTURES
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-13646DOI: 10.1016/j.tsf.2006.04.052ISI: 000241220600078Scopus ID: 2-s2.0-33748909151OAI: oai:DiVA.org:kth-13646DiVA: diva2:326308
Note
QC 20100622Available from: 2010-06-22 Created: 2010-06-22 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Gallium nitride templates and its related materials for electronic and photonic devices
Open this publication in new window or tab >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

 

Place, publisher, year, edition, pages
Stockholm: KTH, 2008. xiv, 89 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Keyword
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Public defence
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Supervisors
Note
QC 20100623Available from: 2008-05-16 Created: 2008-05-16 Last updated: 2010-09-20Bibliographically approved

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Lourdudoss, Sebastian

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