Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire
2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 2, 705-707 p.Article in journal (Refereed) Published
We have developed a virtual GaN substrate on sapphire based on a two-step growth method. By optimizing the growth scheme for the virtual substrate we have improved crystal quality and reduced interface roughness. Our Al0.22Ga0.78N/GaN HEMT structure grown on the optimized semi-insulating GaN virtual substrate, exhibits Hall mobilities as high as 1720 and 7350 cm(2)/Vs and sheet carrier concentrations of 8.4 x 1012 and 10.0 x 1012 cm(-2) at 300 K and 20 K, respectively The presence of good AlGaN/GaN interface quality and surface morphology is also substantiated by X-Ray reflectivity and Atomic Force Microscopy measurements. A simplified transport model is used to fit the experimental Hall mobility.
Place, publisher, year, edition, pages
2006. Vol. 515, no 2, 705-707 p.
MOVPE, HEMT, scattering, interface roughness, X-ray reflectivity, dislocations, CHEMICAL-VAPOR-DEPOSITION, GAN, HETEROSTRUCTURES
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-13646DOI: 10.1016/j.tsf.2006.04.052ISI: 000241220600078ScopusID: 2-s2.0-33748909151OAI: oai:DiVA.org:kth-13646DiVA: diva2:326308
QC 201006222010-06-222010-06-222011-09-28Bibliographically approved