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Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphire
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.ORCID iD: 0000-0002-4606-4865
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0292-224X
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2007 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 36, no 12, 1621-1624 p.Article in journal (Refereed) Published
Abstract [en]

Carrier trapping of Fe (3+)/Fe2+ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the investigated Fe doping levels on the order of 10(18) cm(-3), the luminescence decay times are strongly dependent on the Fe concentration, indicating that Fe centers act as predominant nonradiative recombination channels. Linear dependence of the decay time on the iron concentration allows estimation of the electron capture cross-section for the Fe3+ ions, which is equal to 1.9 x 10(-15) cm(2). The upper bound for the cross-section of the hole capture of Fe2+ was evaluated as 10 x 10(-15) cm

Place, publisher, year, edition, pages
2007. Vol. 36, no 12, 1621-1624 p.
Keyword [en]
GaN, Fe, semi-insulating, high electron mobility transistor (HEMT), deep acceptor, electron capture cross section, metal-organic vapor phase epitaxy (MOVPE), OPTICAL-PROPERTIES, LAYERS, LEVEL, IRON, INP
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-13653DOI: 10.1007/s11664-007-0202-9ISI: 000250884200014Scopus ID: 2-s2.0-36148953872OAI: oai:DiVA.org:kth-13653DiVA: diva2:326321
Note
QC 20100623Available from: 2010-06-22 Created: 2010-06-22 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Gallium nitride templates and its related materials for electronic and photonic devices
Open this publication in new window or tab >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

 

Place, publisher, year, edition, pages
Stockholm: KTH, 2008. xiv, 89 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Keyword
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Public defence
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Supervisors
Note
QC 20100623Available from: 2008-05-16 Created: 2008-05-16 Last updated: 2010-09-20Bibliographically approved

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Marcinkevicius, SauliusLinnarsson, MargaretaLourdudoss, Sebastian

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