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AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.ORCID iD: 0000-0002-0977-2598
2006 (English)In: Physica Status Solidi C - Current Topics in Solid State Physics: Vol 3, No 6 / [ed] Hildebrandt S; Stutzmann M, 2006, Vol. 3, 2373-2376 p.Conference paper, Published paper (Refereed)
Abstract [en]

A simple AlGaN/GaN HEMT structure without any interlayer on Fe-doped GaN (GaN:Fe) grown by LP-MOVPE in one single run on sapphire is demonstrated. The surface segregation of Fe in GaN occurring during growth is identified. Hall measurements yield 2DEG (two dimensional electron gas) mobilities of 1700 and 10700 cm2/Vs and sheet carrier concentrations of 5.1×10 12 and 5.7×1012 cm-2 at 300 K and 20 K, respectively. Good pinch-off current-voltage (ID-VD) characteristics is observed from AlGaN/GaN HEMTs. A maximum drain current density of 0.6 A/mm and a peak extrinsic transconductance of 200 mS/mm have been observed. The HEMT structure yields very good device isolation as indicated by an isolation current of ≀1 nA at 20 V.

Place, publisher, year, edition, pages
2006. Vol. 3, 2373-2376 p.
Series
PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, ISSN 1610-1634 ; Volume: 3, Issue: 6
Keyword [en]
AlGaN/GaN high-electron-mobility transistors; Device isolation; Drain current density; GaN buffer, Current density; Doping (additives); Electron gas; Gallium nitride; Iron; Semiconducting aluminum compounds; Silicon on sapphire technology, High electron mobility transistors
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-13656DOI: 10.1002/pssc.200565152ISI: 000239543600233Scopus ID: 2-s2.0-33746371379OAI: oai:DiVA.org:kth-13656DiVA: diva2:326495
Conference
6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, GERMANY, AUG 28-SEP 02, 2005
Note
QC 20100623Available from: 2010-06-23 Created: 2010-06-22 Last updated: 2010-06-23Bibliographically approved
In thesis
1. Gallium nitride templates and its related materials for electronic and photonic devices
Open this publication in new window or tab >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

 

Place, publisher, year, edition, pages
Stockholm: KTH, 2008. xiv, 89 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Keyword
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Public defence
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Supervisors
Note
QC 20100623Available from: 2008-05-16 Created: 2008-05-16 Last updated: 2010-09-20Bibliographically approved

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Lourdudoss, Sebastian

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