AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE
2006 (English)In: Physica Status Solidi C - Current Topics in Solid State Physics: Vol 3, No 6 / [ed] Hildebrandt S; Stutzmann M, 2006, Vol. 3, 2373-2376 p.Conference paper (Refereed)
A simple AlGaN/GaN HEMT structure without any interlayer on Fe-doped GaN (GaN:Fe) grown by LP-MOVPE in one single run on sapphire is demonstrated. The surface segregation of Fe in GaN occurring during growth is identified. Hall measurements yield 2DEG (two dimensional electron gas) mobilities of 1700 and 10700 cm2/Vs and sheet carrier concentrations of 5.1Ã10 12 and 5.7Ã1012 cm-2 at 300 K and 20 K, respectively. Good pinch-off current-voltage (ID-VD) characteristics is observed from AlGaN/GaN HEMTs. A maximum drain current density of 0.6 A/mm and a peak extrinsic transconductance of 200 mS/mm have been observed. The HEMT structure yields very good device isolation as indicated by an isolation current of â€1 nA at 20 V.
Place, publisher, year, edition, pages
2006. Vol. 3, 2373-2376 p.
, PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, ISSN 1610-1634 ; Volume: 3, Issue: 6
AlGaN/GaN high-electron-mobility transistors; Device isolation; Drain current density; GaN buffer, Current density; Doping (additives); Electron gas; Gallium nitride; Iron; Semiconducting aluminum compounds; Silicon on sapphire technology, High electron mobility transistors
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-13656DOI: 10.1002/pssc.200565152ISI: 000239543600233ScopusID: 2-s2.0-33746371379OAI: oai:DiVA.org:kth-13656DiVA: diva2:326495
6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, GERMANY, AUG 28-SEP 02, 2005
QC 201006232010-06-232010-06-222010-06-23Bibliographically approved