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Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications
Georgia Institute of Technology.
Université de Metz and SUPELEC.
KTH, School of Information and Communication Technology (ICT), Centres, Electrum Laboratory, ELAB.
Université de Metz and SUPELEC.
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2007 (English)In: Quantum Sensing and Nanophotonic Devices IV / [ed] Razeghi M; Brown GJ, 2007, Vol. 6479, G4791-G4791 p.Conference paper, Published paper (Refereed)
Abstract [en]

The development of wide band gap semiconductors extends their applications in optoelectronics devices to the UV domain. Compact lasers and high sensitivity APD detectors in UV range are currently needed for different applications such as, purification, covert communication and real time detection of airborne pathogens. Until now, the full exploitation of these potential materials has been limited by the lack of suitable GaN substrates. Recently, a novel class of materials has been reported based on BGaN and BAlN, potentially reducing the crystal defect densities by orders of magnitude compared to existing wide band gap heterostructures. Characteristics of these new alloys are similar to those of AlGaN materials with the advantage that these can be lattice matched to AlN and SiC substrates. In addition, these materials offer the possibility of using quaternary BAlGaN alloys at Ultra Violet (UV) wavelengths and hence lead to more degrees of freedom in designing sophisticated device structures. In this paper we describe the MOVPE growth conditions used to incorporate boron in GaN and AlGaN. Detailed characterization and analysis in terms of structural and electrical properties are discussed.

Place, publisher, year, edition, pages
2007. Vol. 6479, G4791-G4791 p.
Series
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), ISSN 0277-786X ; 6479
Keyword [en]
Electric properties; Energy gap; Heterojunctions; Pathogens; Semiconductor materials; Ultraviolet radiation, Compact lasers; Real time detection; SiC substrates; Ultra Violet (UV) wavelengths, Gallium nitride
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-13671DOI: 10.1117/12.717640ISI: 000246393600026Scopus ID: 2-s2.0-34248665565ISBN: 978-0-8194-6592-4 (print)OAI: oai:DiVA.org:kth-13671DiVA: diva2:326581
Conference
Conference on Quantum Sensing and Nanophotonic Devices IV, San Jose, CA, JAN 22-25, 2007, SPIE
Note
QC 20100623Available from: 2010-06-23 Created: 2010-06-23 Last updated: 2010-06-23Bibliographically approved
In thesis
1. Gallium nitride templates and its related materials for electronic and photonic devices
Open this publication in new window or tab >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

 

Place, publisher, year, edition, pages
Stockholm: KTH, 2008. xiv, 89 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Keyword
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
National Category
Materials Engineering
Identifiers
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Public defence
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Supervisors
Note
QC 20100623Available from: 2008-05-16 Created: 2008-05-16 Last updated: 2010-09-20Bibliographically approved

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Lourdudoss, Sebastian

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