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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates
Georgia Inst Technol, Georgia Tech, Metz, France.
Nanovat SARL, Orsay, France; Univ Technol Troyes, France.
Nanovat SARL, Orsay; Univ Technol Troyes.
Univ Metz.
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2008 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 310, no 5, 944-947 p.Article in journal (Refereed) Published
Abstract [en]

The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (similar to 1.8%). In this study, we have successfully grown GaN by MOVPE on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.

Place, publisher, year, edition, pages
2008. Vol. 310, no 5, 944-947 p.
Keyword [en]
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-13694DOI: 10.1016/j.jcrysgro.2007.11.137ISI: 000254428100016ScopusID: 2-s2.0-39549115245OAI: diva2:326597
QC 20100623Available from: 2010-06-23 Created: 2010-06-23 Last updated: 2010-06-23Bibliographically approved
In thesis
1. Gallium nitride templates and its related materials for electronic and photonic devices
Open this publication in new window or tab >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]


Place, publisher, year, edition, pages
Stockholm: KTH, 2008. xiv, 89 p.
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
National Category
Materials Engineering
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Public defence
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
QC 20100623Available from: 2008-05-16 Created: 2008-05-16 Last updated: 2010-09-20Bibliographically approved

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