Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates
2008 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 310, no 5, 944-947 p.Article in journal (Refereed) Published
The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (similar to 1.8%). In this study, we have successfully grown GaN by MOVPE on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.
Place, publisher, year, edition, pages
2008. Vol. 310, no 5, 944-947 p.
MOVPE, GaN, ZnO, LAYERS
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-13694DOI: 10.1016/j.jcrysgro.2007.11.137ISI: 000254428100016ScopusID: 2-s2.0-39549115245OAI: oai:DiVA.org:kth-13694DiVA: diva2:326597
QC 201006232010-06-232010-06-232010-06-23Bibliographically approved